International Rectifier IRG4PC30FD Datasheet
PD 91460B
TO-247AC
IRG4PC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
Fast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
FeaturesFeatures
Features
FeaturesFeatures
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
G
n-channel
bridge configurations
• Industry standard TO-247AC package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 31
IC @ TC = 100°C Continuous Collector Current 17
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 12
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 100
PD @ TC = 100°C Maximum Power Dissipation 42
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current Q 120 A
Clamped Inductive Load Current R 120
Diode Maximum Forward Current 120
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight 6 (0.21) ––– g (oz)
Junction-to-Case - IGBT ––– 1.2
Junction-to-Case - Diode ––– 2.5
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40
C
V
= 600V
CES
V
CE(on) typ.
E
@VGE = 15V, IC = 17A
= 1.59V
W
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12/30/00
IRG4PC30FD
Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
Collector-to-Emitter Breakdown VoltageS 600 ––– ––– VVGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage ––– 0.69 ––– V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage ––– 1.59 1.8 IC = 17A VGE = 15V
––– 1.99 ––– VIC = 31A See Fig. 2, 5
––– 1.70 ––– IC = 17A, TJ = 150°C
V
∆V
g
I
V
CES
GE(th)
GE(th)
fe
FM
Gate Threshold Voltage 3.0 ––– 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ––– -11 ––– mV/°CVCE = VGE, IC = 250µA
Forward Transconductance T 6.1 10 ––– SVCE = 100V, IC = 17A
Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V
––– ––– 2500 V
= 0V, VCE = 600V, TJ = 150°C
GE
Diode Forward Voltage Drop ––– 1.4 1.7 V IC = 12A See Fig. 13
––– 1.3 1.6 IC = 12A, TJ = 150°C
I
GES
Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
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Total Gate Charge (turn-on) ––– 51 77 IC = 17A
Gate - Emitter Charge (turn-on) ––– 7.9 12 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) ––– 19 28 VGE = 15V
Turn-On Delay Time ––– 42 ––– TJ = 25°C
Rise Time ––– 26 ––– ns IC = 17A, VCC = 480V
Turn-Off Delay Time ––– 230 350 VGE = 15V, RG = 23Ω
Fall Time ––– 160 230 Energy losses include "tail" and
Turn-On Switching Loss ––– 0.63 ––– diode reverse recovery.
Turn-Off Switching Loss ––– 1.39 ––– mJ See Fig. 9, 10, 11, 18
Total Switching Loss ––– 2.02 3.9
Turn-On Delay Time ––– 42 ––– TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time ––– 27 ––– ns IC = 17A, VCC = 480V
Turn-Off Delay Time ––– 310 ––– VGE = 15V, RG = 23Ω
Fall Time ––– 310 ––– Energy losses include "tail" and
Total Switching Loss ––– 3.2 ––– mJ diode reverse recovery.
Internal Emitter Inductance ––– 13 ––– nH Measured 5mm from package
Input Capacitance ––– 1100 ––– VGE = 0V
Output Capacitance ––– 74 ––– pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ––– 14 ––– ƒ = 1.0MHz
Diode Reverse Recovery Time ––– 42 60 TJ = 25°C See Fig.
––– 80 120 TJ = 125°C 14 IF = 12A
ns
Diode Peak Reverse Recovery Current ––– 3.5 6.0 A TJ = 25°C See Fig.
––– 5.6 10 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge ––– 80 180 TJ = 25°C See Fig.
––– 220 600 TJ = 125°C 16 di/dt 200A/µs
/dt Diode Peak Rate of Fall of Recovery ––– 180 ––– TJ = 25°C See Fig.
During t
b
––– 120 ––– TJ = 125°C 17
nC
A/µs
IRG4PC30FD
A
A
)
A
25
Duty cy cle: 50%
T = 125° C
J
T = 9 0 °C
20
15
10
60% of rated
v o lta g e
Load Current ( A )
5
0
0.1 1 10 100
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
sink
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Powe r Dissip ation = 24W
1000
T = 25°C
100
10
C
I , Collector-to-Emitter Current (A)
1
1 10
V , Collector-to-Emitter Voltage (V)
CE
J
T = 150°C
J
V = 15V
GE
20µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
1000
100
T = 150°C
J
T = 25°C
10
C
I , Collector-to-Emitter Current (A)
1
5 6 7 8 9 10 11 12 13
V , Gate-to-Emitter Voltage (V)
GE
J
V = 50V
CC
5µs PULSE WIDTH
Fig. 3 - Typical Transfer Characteristics
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