International Rectifier IRG4BC40U Datasheet
PD - 91456E
IRG4BC40U
INSULATED GATE BIPOLAR TRANSISTOR
FeaturesFeatures
Features
FeaturesFeatures
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
UltraFast Speed IGBT
C
V
CES
= 600V
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
G
E
V
CE(on) typ.
= 1.72V
@VGE = 15V, IC = 20A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 40
IC @ TC = 100°C Continuous Collector Current 20 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 160
PD @ TC = 100°C Maximum Power Dissipation 65
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current Q 160
Clamped Inductive Load Current R 160
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy S 15 mJ
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
TO-220AB
W
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight ------ 2 (0.07) ------ g (oz)
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Junction-to-Case ------ ------ 0.77
Case-to-Sink, flat, greased surface ------ 0.50 ------ °C/W
Junction-to-Ambient, typical socket mount ------ ------ 80
4/17/2000
IRG4BC40U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 ---- ---- V VGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage ---- 1.72 2.1 IC = 20A VGE = 15V
---- 2.15 ---- V IC = 40A
---- 1.7 ---- IC = 20A, TJ = 150°C
Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ---- -13 ---- mV/°CVCE = VGE, IC = 250µA
Forward Transconductance U 11 18 ---- S VCE = 100V, IC = 20A
---- ---- 250 VGE = 0V, VCE = 600V
Zero Gate Voltage Collector Current ---- ---- 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C
---- ---- 2500 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Total Gate Charge (turn-on) ---- 100 150 IC = 20A
Gate - Emitter Charge (turn-on) ---- 16 25 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) ---- 40 60 VGE = 15V
Turn-On Delay Time ---- 34 ---- TJ = 25°C
Rise Time ---- 19 ---- ns IC = 20A, VCC = 480V
Turn-Off Delay Time ---- 110 175 VGE = 15V, RG = 10Ω
Fall Time ---- 120 180 Energy losses include "tail"
Turn-On Switching Loss ---- 0.32 ---Turn-Off Switching Loss ---- 0.35 ---- mJ See Fig. 10, 11, 13, 14
Total Switching Loss ---- 0.67 1.0
Turn-On Delay Time ---- 30 ---- TJ = 150°C,
Rise Time ---- 19 ---- ns IC = 20A, VCC = 480V
Turn-Off Delay Time ---- 220 ---- VGE = 15V, RG = 10Ω
Fall Time ---- 160 ---- Energy losses include "tail"
Total Switching Loss ---- 1.4 ---- mJ See Fig. 13, 14
Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package
Input Capacitance ---- 2100 ---- VGE = 0V
Output Capacitance ---- 140 ---- pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ---- 34 ---- ƒ = 1.0MHz
See Fig. 2, 5
Notes:
Q Repetitive rating; V
= 20V, pulse width limited by
GE
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 13b )
R V
= 80%(V
CC
CES
), V
= 20V, L = 10µH, RG = 10Ω,
GE
U Pulse width 5.0µs, single shot.
(see fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4BC40U
)
A
µ
A
)
60
50
40
30
20
Square wave:
60% of rated
voltage
I
For both:
Duty cycle: 50%
T = 125°C
J
T = 90°C
sink
Gate drive as specified
Power D issip ation = 28W
Triangular wave:
I
Clamp voltage:
80% of ra ted
Load Current ( A )
10
0
0.1 1 10 100
Ideal diodes
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
1000
of fundamental; for triangular wave, I=IPK)
RMS
1000
A
100
10
C
I , Collector-to-Emitter Current (A)
1
0.1 1 10
V , Collector-to-Emitter Voltage (V)
CE
T = 25°C
J
T = 150°C
J
V = 15V
GE
20µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
100
T = 150°C
J
T = 25° C
10
C
I , C ollector-to-Emitter C urre nt (A)
1
4681012
V , G ate-to-Emitter Vo ltage (V
GE
J
V = 10V
CC
5
s PULSE WIDTH
Fig. 3 - Typical Transfer Characteristics
TC = 25°C
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