International Rectifier IRG4BC40K Datasheet
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91592B
IRG4BC40K
Short Circuit Rated
UltraFast IGBT
FeaturesFeatures
Features
FeaturesFeatures
• Short Circuit Rated UltraFast: optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, V
GE
= 15V
• Generation 4 IGBT design provides higher efficiency
than Generation 3
• Industry standard TO-247AC package
G
C
V
= 600V
CES
V
CE(on) typ.
E
@VGE = 15V, IC = 25A
= 2.1V
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 42
IC @ TC = 100°C Continuous Collector Current 25 A
I
CM
I
LM
t
sc
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 160 W
PD @ TC = 100°C Maximum Power Dissipation 65
T
J
T
STG
Thermal Resistance
R
θJC
R
θCS
R
θJA
Wt Weight 2 (0.07) ––– g (oz)
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Collector-to-Emitter Voltage 600 V
Pulsed Collector Current Q 84
Clamped Inductive Load Current R 84
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy S 15 mJ
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Parameter Typ. Max. Units
Junction-to-Case ––– 0.77
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 80
4/17/2000
IRG4BC40K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Q Repetitive rating; V
max. junction temperature. ( See fig. 13b )
R V
(See fig. 13a)
Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.46 — V/°CVGE = 0V, IC = 1.0mA
J
— 2.10 2.6 IC = 25A VGE = 15V
Collector-to-Emitter Saturation Voltage — 2.70 — IC = 42A See Fig.2, 5
— 2.14 — IC = 25A , TJ = 150°C
V
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -13 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance U 7.0 14 — SVCE = 100 V, IC = 25A
Zero Gate Voltage Collector Current
——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
——2000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current ——±100 n A VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 120 180 IC = 25A
Gate - Emitter Charge (turn-on) — 16 24 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 51 77 VGE = 15V
Turn-On Delay Time — 30 —
Rise Time — 15 — TJ = 25°C
Turn-Off Delay Time — 140 210 IC = 25A, VCC = 480V
ns
Fall Time — 140 210 VGE = 15V, RG = 10Ω
Turn-On Switching Loss — 0.62 — Energy losses include "tail"
Turn-Off Switching Loss — 0.33 — mJ See Fig. 9,10,14
Total Switching Loss — 0.95 1.4
Short Circuit Withstand Time 10 —— µs VCC = 400V, TJ = 125°C
VGE = 15V, RG = 10Ω , V
Turn-On Delay Time — 30 — TJ = 150°C,
Rise Time — 18 — IC = 25A, VCC = 480V
Turn-Off Delay Time — 190 — VGE = 15V, RG = 10Ω
ns
Fall Time — 150 — Energy losses include "tail"
Total Switching Loss — 1.9 — mJ See Fig. 11,14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 1600 — VGE = 0V
Output Capacitance — 130 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 55 —ƒ = 1.0MHz
= 80%(V
CC
CES
= 20V, pulse width limited by
GE
), V
= 20V, L = 10µH, RG = 10Ω,
GE
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
CPK
< 500V
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IRG4BC40K
A
)
A
50
40
30
20
Square wave:
60% of rated
v olta g e
For both:
Duty cycle: 50%
T = 125° C
J
T = 9 0 ° C
sink
Gate drive as specified
Pow er Dissipation = 28W
Triangular wave:
Clamp voltage:
80 % o f ra te d
Load Current (A)
10
0
0.1 1 10 100
Ideal diodes
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
100
of fundamental)
RMS
100
T = 150°C
o
T = 150 C
J
10
o
T = 25 C
J
C
I , Collector-to-Emitter Current (A)
1
0.1 1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
10
C
I , Collector-to-Emitter Current (A)
J
T = 25°C
J
V = 50V
CC
1
57911
V , Gate-to-Emitter Voltage (V)
GE
5µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
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