International Rectifier IRG4BC40 Datasheet

Parameter Max. Units

V

CES

Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 49
IC @ TC = 100°C Continuous Collector Current 27 A
I

CM

Pulsed Collector Current Q 200
I

LM

Clamped Inductive Load Current R 200
V

GE

Gate-to-Emitter Voltage ± 20 V
E

ARV

Reverse Voltage Avalanche Energy S 15 mJ
PD @ TC = 25°C Maximum Power Dissipation 160
PD @ TC = 100°C Maximum Power Dissipation 65
T

J

Operating Junction and -55 to + 150
T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

IRG4BC40F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

PD - 91454B

E

C

G

n-channel

FeaturesFeatures

FeaturesFeatures

Features

• Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).

• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3

• Industry standard TO-220AB package

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

Benefits

V

CES

= 600V

V

CE(on) typ.

= 1.50V

@VGE = 15V, IC = 27A

4/17/2000

Parameter Typ. Max. Units

R

θJC

Junction-to-Case ––– 0.77

R

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

R

θJA

Junction-to-Ambient, typical socket mount ––– 80

Wt Weight 2.0 (0.07) ––– g (oz)

Thermal Resistance

Absolute Maximum Ratings

W

TO-220AB

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IRG4BC40F

2 www.irf.com

Parameter Min. Typ. Max. Units Conditions

Q

g

Total Gate Charge (turn-on) — 100 150 IC = 27A

Q

ge

Gate - Emitter Charge (turn-on) — 15 23 nC VCC = 400V See Fig. 8

Q

gc

Gate - Collector Charge (turn-on) — 35 53 VGE = 15V

t

d(on)

Turn-On Delay Time — 26 —

t

r

Rise Time — 18 — TJ = 25°C

t

d(off)

Turn-Off Delay Time — 240 360 IC = 27A, VCC = 480V

t

f

Fall Time — 170 250 VGE = 15V, RG = 10Ω

E

on

Turn-On Switching Loss — 0.37 — Energy losses include "tail"

E

off

Turn-Off Switching Loss — 1.81 — mJ See Fig. 10, 11, 13, 14

E

ts

Total Switching Loss — 2.18 2.8

t

d(on)

Turn-On Delay Time — 25 — TJ = 150°C,

t

r

Rise Time — 21 — IC = 27A, VCC = 480V

t

d(off)

Turn-Off Delay Time — 380 — VGE = 15V, RG = 10Ω

t

f

Fall Time — 310 — Energy losses include "tail"

E

ts

Total Switching Loss — 3.9 — mJ See Fig. 13, 14

L

E

Internal Emitter Inductance — 7.5 — nH Measured 5mm from package

C

ies

Input Capacitance — 2200 — VGE = 0V

C

oes

Output Capacitance — 140 — pF VCC = 30V See Fig. 7

C

res

Reverse Transfer Capacitance — 29 —ƒ = 1.0MHz

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA

V

(BR)ECS

Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A

∆V

(BR)CES

/∆T

J

Temperature Coeff. of Breakdown Voltage — 0.70 — V/°CVGE = 0V, IC = 1.0mA

— 1.50 1.7 I

C

= 27A VGE = 15V

V

CE(ON)

Collector-to-Emitter Saturation Voltage — 1.85 — IC = 49A See Fig.2, 5

— 1.56 — I

C

= 27A , TJ = 150°C

V

GE(th)

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

∆V

GE(th)

/∆TJTemperature Coeff. of Threshold Voltage — -12 — mV/°CVCE = VGE, IC = 250µA

g

fe

Forward Transconductance U 9.2 12 — SVCE = 100V, IC = 27A

——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C
——1000 VGE = 0V, VCE = 600V, TJ = 150°C

I

GES

Gate-to-Emitter Leakage Current ——±100 n A VGE = ±20V

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

I

CES

Zero Gate Voltage Collector Current

V

µA

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

ns

ns

T Pulse width ≤ 80µs; duty factor ≤ 0.1%.

U Pulse width 5.0µs, single shot.

Notes:

Q Repetitive rating; V

GE

= 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

R V

CC

= 80%(V

CES

), V

GE

= 20V, L = 10µH, RG = 10Ω,

(See fig. 13a)

S Repetitive rating; pulse width limited by maximum

junction temperature.

IRG4BC40F

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Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

RMS

of fundamental; for triangular wave, I=IPK)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

1

10

100

1000

5 6 7 8 9 10 11 12

C

I , Collector-to-Emitter Current (A)

GE

T = 25°C

T = 150°C

J

J

V , Gate-to-Emitter Voltage (V)

A

V = 50V
5µs PULSE WIDTH

CC

1

10

100

1000

1 10

CE

V , Collector-to-Emitter Voltage (V

)

T = 150°C

T = 25°C

J

J

V = 15V
20µs PULSE W IDTH

GE

A

I

C

, Collector-to-Emitter Current (A)

Load Current ( A )

0

10

20

30

40

50

60

0.1 1 10 100

f, Frequency (kHz

)

A

60% of rated
voltage

I

Ideal diodes

Square wave:

For both:

Duty cycle: 50%
T = 125°C
T = 90° C
Gate drive as specified

sink

J

Triangular wave:

I

Clamp voltage:
80% of rated

Power D issipation = 28W