International Rectifier IRG4BC30W-S Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

PD - 91790

IRG4BC30W-S

Features

• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)

C

V

= 600V

CES

applications

• Industry-benchmark switching losses improve
efficiency of all power supply topologies

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers

G

E

n-channel

V

CE(on) typ.

= 2.10V

@VGE = 15V, IC = 12A

tighter parameters distribution, exceptional reliability

Benefits

• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)

• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)

2

D Pak

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 23
IC @ TC = 100°C Continuous Collector Current 12 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 100
PD @ TC = 100°C Maximum Power Dissipation 42
T

J

T

STG

Collector-to-Emitter Breakdown Voltage 600 V

Pulsed Collector Current  92
Clamped Inductive Load Current  92
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy  180 mJ

Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

W

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case ––– 1.2 °C/W
Junction-to-Ambient, ( PCB Mounted,steady-state)* ––– 40

* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering

techniques refer to application note #AN-994.

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8/13/98

IRG4BC30W-S

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(ON)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Notes:

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage  18 — — V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.34 — V/°C VGE = 0V, IC = 1.0mA

J

— 2.1 2.7 IC = 12A VGE = 15V

Collector-to-Emitter Saturation Voltage — 2.45 — IC = 23 A See Fig.2, 5

— 1.95 — IC = 12A , TJ = 150°C

V

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance  11 16 — S VCE = 100 V, IC = 12A
Zero Gate Voltage Collector Current

— — 250 VGE = 0V, VCE = 600V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C

µA

— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge (turn-on) — 51 76 IC = 12A
Gate - Emitter Charge (turn-on) — 7.6 11 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 18 27 VGE = 15V
Turn-On Delay Time — 25 —
Rise Time — 16 — TJ = 25°C
Turn-Off Delay Time — 99 150 IC = 12A, VCC = 480V

ns

Fall Time — 67 100 VGE = 15V, RG = 23Ω
Turn-On Switching Loss — 0.13 — Energy losses include "tail"
Turn-Off Switching Loss — 0.13 — mJ See Fig. 9, 10, 13, 14
Total Switching Loss — 0.26 0.35
Turn-On Delay Time — 24 — TJ = 150°C,
Rise Time — 17 — IC = 12A, VCC = 480V
Turn-Off Delay Time — 150 — VGE = 15V, RG = 23Ω

ns

Fall Time — 150 — Energy losses include "tail"
Total Switching Loss — 0.55 — mJ See Fig. 11,13, 14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 980 — VGE = 0V
Output Capacitance — 71 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 18 — ƒ = 1.0MHz

 Repetitive rating; V

= 20V, pulse width limited by

GE

max. junction temperature. ( See fig. 13b )

 V

CC

(See fig. 13a)

= 80%(V

CES

), V

= 20V, L = 10µH, RG = 23Ω,

GE

 Pulse width ≤ 80µs; duty factor ≤ 0.1%.
 Pulse width 5.0µs, single shot.

 Repetitive rating; pulse width limited by maximum

junction temperature.

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IRG4BC30W-S

A

5.0

4.0

3.0

2.0

Square wave:

60% of rated
voltage

For both:

Duty cycle: 50%
T = 125°C

J

T = 90°C

sink
Gate drive as specified
Power Dissipation = 1.75W

Triangular wave:

Clamp voltage:
80% of rated

Load C u rrent (A)

1.0

0.0

0.1 1 10 100 1000

Ideal diodes

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

100

of fundamental; for triangular wave, I=IPK)

RMS

100

°

T = 150 C

J

10

T = 150 C

10

C

I , Collector-to-Emitter Current (A)

1

1 10

Fig. 2 - Typical Output Characteristics

°

J

°

T = 25 C

J

V = 15V

GE

20µs PULSE WIDTH

V , Collector-to-Emitter Voltage (V)

CE

°

T = 25 C

J

1

C

I , Collector-to-Emitter Current (A)

0.1

5.0 6.0 7.0 8.0 9.0 10.0 11.0

V , Gate-to-Emitter Voltage (V)

GE

V = 50V

CC

5µs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics

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