International Rectifier IRG4BC30UD Datasheet
PD 91453B
IRG4BC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
FeaturesFeatures
Features
FeaturesFeatures
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
G
n-channel
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 23
IC @ TC = 100°C Continuous Collector Current 12
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 12
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 100
PD @ TC = 100°C Maximum Power Dissipation 42
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current Q 92 A
Clamped Inductive Load Current R 92
Diode Maximum Forward Current 92
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ------ 2 (0.07) ------ g (oz)
Junction-to-Case - IGBT ------ ------ 1.2
Junction-to-Case - Diode ------ ------ 2.5 °C/W
Case-to-Sink, flat, greased surface ------ 0.50 -----Junction-to-Ambient, typical socket mount ----- ----- 80
www.irf.com 1
C
E
V
CES
V
CE(on) typ.
@VGE = 15V, IC = 12A
TO-220AB
= 600V
= 1.95V
4/17/00
W
IRG4BC30UD
Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
Collector-to-Emitter Breakdown VoltageS 600 ---- ---- V VGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage ---- 1.95 2.1 IC = 12A VGE = 15V
---- 2.52 ---- V IC = 23A See Fig. 2, 5
---- 2.09 ---- IC = 12A, TJ = 150°C
V
∆V
g
I
CES
GE(th)
GE(th)
fe
Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ---- -11 ---- mV/°CVCE = VGE, IC = 250µA
Forward Transconductance T 3.1 8.6 ---- S VCE = 100V, IC = 12A
Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 2500 VGE = 0V, VCE = 600V, TJ = 150°C
V
FM
Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 12A See Fig. 13
---- 1.3 1.6 IC = 12A, TJ = 150°C
I
GES
Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) ---- 50 75 IC = 12A
Qge Gate - Emitter Charge (turn-on) ---- 8.1 12 nC VCC = 400V See Fig. 8
Q
t
d(on)
t
r
t
d(off)
t
f
E
E
E
t
d(on)
t
r
t
d(off)
t
f
E
L
C
C
C
t
rr
gc
on
off
ts
ts
E
ies
oes
res
Gate - Collector Charge (turn-on) ---- 18 27 VGE = 15V
Turn-On Delay Time ---- 40 ---- TJ = 25°C
Rise Time ---- 21 ---- ns IC = 12A, VCC = 480V
Turn-Off Delay Time ---- 91 140 VGE = 15V, RG = 23Ω
Fall Time ---- 80 130 Energy losses include "tail" and
Turn-On Switching Loss ---- 0.38 ---- diode reverse recovery.
Turn-Off Switching Loss ---- 0.16 ---- mJ See Fig. 9, 10, 11, 18
Total Switching Loss ---- 0.54 0.9
Turn-On Delay Time ---- 40 ---- TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time ---- 22 ---- ns IC = 12A, VCC = 480V
Turn-Off Delay Time ---- 120 ---- VGE = 15V, RG = 23Ω
Fall Time ---- 180 ---- Energy losses include "tail" and
Total Switching Loss ---- 0.89 ---- mJ diode reverse recovery.
Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package
Input Capacitance ---- 1100 ---- VGE = 0V
Output Capacitance ---- 73 ---- pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ---- 14 ---- ƒ = 1.0MHz
Diode Reverse Recovery Time ---- 42 60 ns TJ = 25°C See Fig.
---- 80 120 TJ = 125°C 14 IF = 12A
I
rr
Diode Peak Reverse Recovery Current ---- 3.5 6.0 A TJ = 25°C See Fig.
---- 5.6 10 TJ = 125°C 15 VR = 200V
Q
rr
Diode Reverse Recovery Charge ---- 80 180 nC TJ = 25°C See Fig.
---- 220 600 TJ = 125°C 16 di/dt 200A/µs
di
/dt Diode Peak Rate of Fall of Recovery ---- 180 ---- A/µs TJ = 25°C See Fig.
(rec)M
During t
b
---- 120 ---- TJ = 125°C 17
2 www.irf.com
µ
A
A
µ
16
)
12
IRG4BC30UD
Duty cycle: 50%
T = 125° C
J
T = 90° C
sink
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 21 W
8
Load Current ( A )
4
0
0.1 1 10 100
60% of rated
vol tage
I
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
100
10
(Load Current = I
J
T = 25° C
T = 150°C
J
of fundamental)
RMS
100
10
T = 150°C
J
T = 25° C
J
A
1
C
I , Collector-to-Emitter Current (A)
0.1
0.1 1 10
V , C o llecto r-to-Em itter V o ltage (V)
CE
V = 1 5V
GE
20
s PULSE W IDTH
Fig. 2 - Typical Output Characteristics
1
C
I , C ollector-to-Em itter C urrent (A )
0.1
5 6 7 8 9 10 11 12
V , Ga te -to -Em itte r Voltage (V)
GE
V = 1 0V
CC
5
s PULSE W IDTH
Fig. 3 - Typical Transfer Characteristics
www.irf.com 3
Loading...