International Rectifier IRG4BC30U Datasheet
PD - 91452E
IRG4BC30U
INSULATED GATE BIPOLAR TRANSISTOR
FeaturesFeatures
Features
FeaturesFeatures
UltraFast Speed IGBT
C
• UltraFast: optimized for high operating
V
= 600V
frequencies 8-40 kHz in hard switching, >200
CES
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
G
E
V
CE(on) typ.
= 1.95V
@VGE = 15V, IC = 12A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 23
IC @ TC = 100°C Continuous Collector Current 12 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 100
PD @ TC = 100°C Maximum Power Dissipation 42
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 600 V
Pulsed Collector Current Q 92
Clamped Inductive Load Current R 92
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy S 10 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
W
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 2 (0.07) ––– g (oz)
www.irf.com 1
Junction-to-Case ––– 1.2
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 80
4/17/2000
IRG4BC30U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.63 — V/°CVGE = 0V, IC = 1.0mA
J
— 1.95 2.1 I
Collector-to-Emitter Saturation Voltage — 2.52 — IC = 23A See Fig.2, 5
— 2.09 — IC = 12A , TJ = 150°C
V
= 12A VGE = 15V
C
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -13 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance U 3.1 8.6 — SVCE = 100V, IC = 12A
Zero Gate Voltage Collector Current
——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
——1000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current ——±100 n A VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 50 75 IC = 12A
Gate - Emitter Charge (turn-on) — 8.1 12 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 18 27 VGE = 15V
Turn-On Delay Time — 17 —
Rise Time — 9.6 — TJ = 25°C
Turn-Off Delay Time — 78 120 IC = 12A, VCC = 480V
ns
Fall Time — 97 150 VGE = 15V, RG = 23Ω
Turn-On Switching Loss — 0.16 — Energy losses include "tail"
Turn-Off Switching Loss — 0.20 — mJ See Fig. 10, 11, 13, 14
Total Switching Loss — 0.36 0.50
Turn-On Delay Time — 20 — TJ = 150°C,
Rise Time — 13 — IC = 12A, VCC = 480V
Turn-Off Delay Time — 180 — VGE = 15V, RG = 23Ω
ns
Fall Time — 140 — Energy losses include "tail"
Total Switching Loss — 0.73 — mJ See Fig. 13, 14
Internal Source Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 1100 — VGE = 0V
Output Capacitance — 73 — pF VCC = 30V See Fig.7
Reverse Transfer Capacitance — 14 —ƒ = 1.0MHz
Q Repetitive rating; V
= 20V, pulse width limited by
GE
max. junction temperature. ( See fig. 13b )
R V
CC
(See fig. 13a)
= 80%(V
CES
), V
= 20V, L = 10µH, RG = 23Ω,
GE
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2 www.irf.com
IRG4BC30U
µ
A
A
µ
)
35
30
25
20
Square wave:
60% of rated
15
Load Current ( A )
10
5
0
0.1 1 10 100
voltage
I
Ideal diodes
For both:
Duty cycle: 50%
T = 125°C
J
T = 90 °C
sink
Gate drive as specified
Po we r D iss ipa tion = 21 W
Triangular wave:
I
Clamp voltage:
80% of rated
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
100
of fundamental; for triangular wave, I=IPK)
RMS
100
A
J
T = 25° C
T = 150°C
T = 150°C
10
1
C
I , Collector-to-Emitter Current (A)
0.1
0.1 1 10
V , C o llecto r-to-Em itter V o ltage (V)
CE
V = 1 5V
20
J
GE
s PULSE W IDTH
Fig. 2 - Typical Output Characteristics
J
10
T = 25° C
J
1
C
I , Collector-to-Em itter Current (A)
0.1
5 6 7 8 9 10 11 12
V , Ga te -to -Emitte r Voltage (V)
GE
V = 10V
CC
5
s PULSE W IDTH
Fig. 3 - Typical Transfer Characteristics
www.irf.com 3
Loading...