International Rectifier IRG4BC30KD Datasheet
PD -91595A
IRG4BC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
FeaturesFeatures
Features
FeaturesFeatures
• High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
G
• tighter parameter distribution and higher efficiency than
previous generations
• IGBT co-packaged with HEXFRED
TM
ultrafast,
n-chan nel
ultrasoft recovery antiparallel diodes
Benefits
• Latest generation 4 IGBTs offer highest power density
motor controls possible
• HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGBC30KD2 and IRGBC30MD2
products
• For hints see design tip 97003
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 28
IC @ TC = 100°C Continuous Collector Current 16
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 12
I
FM
t
sc
V
GE
PD @ TC = 25°C Maximum Power Dissipation 100
PD @ TC = 100°C Maximum Power Dissipation 42
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current Q 58 A
Clamped Inductive Load Current R 58
Diode Maximum Forward Current 58
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
C
E
TO-220AB
Short Circuit Rated
UltraFast IGBT
V
= 600V
CES
V
CE(on) typ.
@VGE = 15V, IC = 16A
= 2.21V
W
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ––– 2 (0.07) ––– g (oz)
Junction-to-Case - IGBT ––– ––– 1.2
Junction-to-Case - Diode ––– ––– 2.5 °C/W
Case-to-Sink, flat, greased surface ––– 0.50 –––
Junction-to-Ambient, typical socket mount ––– ––– 80
www.irf.com 1
4/24/2000
IRG4BC30KD
Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
Collector-to-Emitter Breakdown VoltageS 600 —— VVGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage — 0.54 — V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 2.21 2.7 IC = 16A VGE = 15V
— 2.88 — VIC = 28A See Fig. 2, 5
— 2.36 — IC = 16A, TJ = 150°C
V
∆V
g
I
CES
GE(th)
GE(th)
fe
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -12 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance T 5.4 8.1 — SVCE = 100V, IC = 16A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 600V
——2500 VGE = 0V, VCE = 600V, TJ = 150°C
V
FM
Diode Forward Voltage Drop — 1.4 1.7 V IC = 12A See Fig. 13
— 1.3 1.6 IC = 12A, TJ = 150°C
I
GES
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
Q
Q
t
d(on)
t
r
t
d(off)
t
f
E
E
E
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
L
C
C
C
t
rr
I
rr
Q
di
g
ge
gc
on
off
ts
ts
E
ies
oes
res
rr
(rec)M
Total Gate Charge (turn-on) — 67 100 IC = 16A
Gate - Emitter Charge (turn-on) — 11 16 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 25 37 VGE = 15V
Turn-On Delay Time — 60 —
Rise Time — 42 — TJ = 25°C
Turn-Off Delay Time — 160 250 IC = 16A, VCC = 480V
ns
Fall Time — 80 120 VGE = 15V, RG = 23Ω
Turn-On Switching Loss — 0.60 — Energy losses include "tail"
Turn-Off Switching Loss — 0.58 — mJ and diode reverse recovery
Total Switching Loss — 1.18 1.6 See Fig. 9,10,14
Short Circuit Withstand Time 10 —— µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω , V
Turn-On Delay Time — 58 — TJ = 150°C, See Fig. 11,14
Rise Time — 42 — IC = 16A, VCC = 480V
Turn-Off Delay Time — 210 — VGE = 15V, RG = 23Ω
ns
Fall Time — 160 — Energy losses include "tail"
Total Switching Loss — 1.69 — mJ and diode reverse recovery
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 920 — VGE = 0V
Output Capacitance — 110 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 27 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig.
— 80 120 TJ = 125°C 14 IF = 12A
Diode Peak Reverse Recovery Current — 3.5 6.0 A TJ = 25°C See Fig.
— 5.6 10 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig.
— 220 600 TJ = 125°C 16 di/dt = 200Aµs
/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs TJ = 25°C See Fig.
During t
b
— 160 — TJ = 125°C 17
CPK
< 500V
2 www.irf.com
IRG4BC30KD
16
14
12
10
LOAD CURRENT (A)
Square wave:
8
6
4
2
0
0.1 1 10 100
60 % o f r a ted
v o l tage
I
Ideal diodes
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
For both:
Duty cycle: 50%
T = 125°C
J
T = 9 0°C
sink
Gate drive as specified
Pow e r D issip ation = W
21
100
o
T = 25 C
J
T = 150 C
J
10
1
C
I , Collector-to-Emitter Current (A)
0.1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
o
100
o
T = 150 C
J
10
o
T = 25 C
1
C
I , Collector-to-Emitter Current (A)
0.1
5 10 15
J
V = 50V
CC
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
www.irf.com 3
Loading...