International Rectifier IRG4BC30FD Datasheet

PD -91451B

TO-220AB

IRG4BC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH

Fast CoPack IGBT

ULTRAFAST SOFT RECOVERY DIODE

FeaturesFeatures

Features

FeaturesFeatures

• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).

• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3

• IGBT co-packaged with HEXFRED

TM

ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

G

n-channel

bridge configurations

• Industry standard TO-220AB package

Benefits

• Generation -4 IGBT's offer highest efficiencies
available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing

• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 31
IC @ TC = 100°C Continuous Collector Current 17
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 12
I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 100
PD @ TC = 100°C Maximum Power Dissipation 42
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current  120 A
Clamped Inductive Load Current  120

Diode Maximum Forward Current 120
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

qJC

R

qJC

R

qCS

R

qJA

Wt Weight ------ 2 (0.07) ------ g (oz)

Junction-to-Case - IGBT ------ ------ 1.2
Junction-to-Case - Diode ------ ------ 2.5 °C/W
Case-to-Sink, flat, greased surface ------ 0.50 -----­Junction-to-Ambient, typical socket mount ----- ----- 80

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C

V

= 600V

CES

V

CE(on) typ.

E

@VGE = 15V, IC = 17A

= 1.59V

W

12/8/98

IRG4BC30FD

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

DV

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA

/DT

Temperature Coeff. of Breakdown Voltage ---- 0.69 ---- V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage ---- 1.59 1.8 IC = 17A VGE = 15V

---- 1.99 ---- V IC = 31A See Fig. 2, 5

---- 1.70 ---- IC = 17A, TJ = 150°C
V
DV
g
I

CES

GE(th)

GE(th)

fe

Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA

/DTJTemperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA

Forward Transconductance  6.1 10 ---- S VCE = 100V, IC = 17A
Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V

---- ---- 2500 VGE = 0V, VCE = 600V, TJ = 150°C
V

FM

Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 12A See Fig. 13

---- 1.3 1.6 IC = 12A, TJ = 150°C
I

GES

Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Total Gate Charge (turn-on) ---- 51 77 IC = 17A
Qge Gate - Emitter Charge (turn-on) ---- 7.9 12 nC VCC = 400V See Fig. 8
Q
t

d(on)

t

r

t

d(off)

t

f

E
E
E
t

d(on)

t

r

t

d(off)

t

f

E
L
C
C
C
t

rr

gc

on
off
ts

ts
E

ies
oes
res

Gate - Collector Charge (turn-on) ---- 19 28 VGE = 15V

Turn-On Delay Time ---- 4 2 ---- TJ = 25°C

Rise Time ---- 26 ---- ns IC = 17A, VCC = 480V

Turn-Off Delay Time ---- 230 350 VGE = 15V, RG = 23W

Fall Time ---- 16 0 23 0 Energy losses include "tail" and

Turn-On Switching Loss ---- 0.63 ---- diode reverse recovery.

Turn-Off Switching Loss ---- 1.39 ---- mJ See Fig. 9, 10, 11, 18

Total Switching Loss ---- 2.02 3.9

Turn-On Delay Time ---- 42 ---- TJ = 150°C, See Fig. 9, 10, 11, 18

Rise Time ---- 27 ---- ns IC = 17A, VCC = 480V

Turn-Off Delay Time ---- 310 ---- VGE = 15V, RG = 23W

Fall Time ---- 31 0 ---- Energy losses include "tail" and

Total Switching Loss ---- 3.2 ---- mJ diode reverse recovery.

Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package

Input Capacitance ---- 1100 ---- VGE = 0V

Output Capacitance ---- 74 ---- pF VCC = 30V See Fig. 7

Reverse Transfer Capacitance ---- 14 ---- ƒ = 1.0MHz

Diode Reverse Recovery Time ---- 42 60 ns TJ = 25°C See Fig.

---- 80 120 TJ = 125°C 14 IF = 12A

I

rr

Diode Peak Reverse Recovery Current ---- 3.5 6.0 A TJ = 25°C See Fig.

---- 5.6 10 TJ = 125°C 15 VR = 200V

Q

rr

Diode Reverse Recovery Charge ---- 80 180 nC TJ = 25°C See Fig.

---- 220 600 TJ = 125°C 16 di/dt 200A/µs

di

/dt Diode Peak Rate of Fall of Recovery ---- 180 ---- A/µs TJ = 25°C See Fig.

(rec)M

During t

b

---- 12 0 ---- TJ = 125°C 17

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ge (V)

A

)

A

20

)

16

12

6 0 % o f ra te d
voltage

8

Load Current ( A )

4

IRG4BC30FD

Duty cycle: 50%
T = 125°C

J

T = 90°C

sink
Ga te drive as specified
Turn -o n los s es inc lud e
effects of reverse recovery

Power Dissipation = 21W

I

0

0.1 1 10 100

f, Frequency (kHz

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

1000

T = 25°C

100

10

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Volta

CE

J

T = 150°C

J

V = 15V

GE

20µs PULSE WIDTH

of fundamental)

RMS

1000

100

T = 150°C

J

T = 25°C

10

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11 12 13

V , Gate-to-Emitter Voltage (V

GE

J

V = 50V

CC

5µs PULSE WIDTH

A

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

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