International Rectifier IRG4BC20W-S Datasheet
INSULATED GATE BIPOLAR TRANSISTOR
PD - 94076
IRG4BC20W-S
FeaturesFeatures
Features
FeaturesFeatures
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
C
V
= 600V
CES
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
G
E
N-channel
V
CE(on) typ.
= 2.16V
@VGE = 15V, IC = 6.5A
tighter parameters distribution, exceptional reliability
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300kHz)
D2Pak
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 13
IC @ TC = 100°C Continuous Collector Current 6.5 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 600 V
Pulsed Collector Current 52
Clamped Inductive Load Current 52
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy 200 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
W
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 1.44 ––– g (oz)
Junction-to-Case ––– 2.1
Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40
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IRG4BC20W-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.48 — V/°C VGE = 0V, IC = 1.0mA
J
— 2.16 2.6 IC = 6.5A VGE = 15V
Collector-to-Emitter Saturation Voltage — 2.55 — IC = 13 A See Fig.2, 5
— 2.05 — IC = 6.5A , TJ = 150°C
V
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -8.8 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 5.5 8.3 — S VCE = 100 V, IC = 6.5A
Zero Gate Voltage Collector Current
— — 250 VGE = 0V, VCE = 600V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 26 38 IC = 6.5A
Gate - Emitter Charge (turn-on) — 3.7 5.5 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 10 15 VGE = 15V
Turn-On Delay Time — 22 —
Rise Time — 14 — TJ = 25°C
Turn-Off Delay Time — 110 160 IC = 6.5A, VCC = 480V
ns
Fall Time — 64 96 VGE = 15V, RG = 50Ω
Turn-On Switching Loss — 0.06 — Energy losses include "tail"
Turn-Off Switching Loss — 0.08 — mJ See Fig. 9, 10, 14
Total Switching Loss — 0.14 0.2
Turn-On Delay Time — 21 — TJ = 150°C,
Rise Time — 15 — IC = 6.5A, VCC = 480V
Turn-Off Delay Time — 150 — VGE = 15V, RG = 50Ω
ns
Fall Time — 15 0 — Energy losses include "tail"
Total Switching Loss — 0.34 — mJ See Fig. 10, 11, 14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 490 — VGE = 0V
Output Capacitance — 38 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 8.8 — ƒ = 1.0MHz
Repetitive rating; V
= 20V, pulse width limited by
GE
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. (See Fig. 13b)
Pulse width 5.0µs, single shot.
V
= 80%(V
CC
(See Fig. 13a)
CES
), V
= 20V, L = 10µH, RG = 50Ω,
GE
Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4BC20W-S
)
25
20
15
10
Square wave:
60% of rated
voltage
For both:
Duty cycle: 50%
T = 125°C
J
T = 90 °C
sink
Gate drive as specified
Power D issipation = 13W
Triangular wave:
Clamp voltage:
80% of rate d
Load Current ( A )
5
0
0.1 1 10 100 1000
Ideal diodes
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
A
100
10
°
T = 150 C
J
°
T = 25 C
J
C
I , Collector-to-Emitter Current (A)
1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
100
T = 150 C
10
C
I , Collector-to-Emitter Current (A)
1
5 6 7 9 10 11
°
J
°
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
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