International Rectifier IRG4BC20UD Datasheet
PD 91449B
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G
Generation 3
• IGBT co-packaged with HEXFRED
ultra-soft-recovery anti-parallel diodes for use in
ultrafast,
n-channel
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 13
IC @ TC = 100°C Continuous Collector Current 6.5
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 7.0
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current Q 52 A
Clamped Inductive Load Current R 52
Diode Maximum Forward Current 52
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ------ 2 (0.07) ------ g (oz)
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Junction-to-Case - IGBT ------ ------ 2.1
Junction-to-Case - Diode ------ ------ 3.5 °C/W
Case-to-Sink, flat, greased surface ------ 0.50 -----Junction-to-Ambient, typical socket mount ----- ----- 80
C
E
V
CES
V
CE(on) typ.
@VGE = 15V, IC = 6.5A
TO-220AB
= 600V
= 1.85V
W
3/21/2000
IRG4BC20UD
Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
Collector-to-Emitter Breakdown VoltageS 600 ---- ---- V VGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage ---- 0.69 ---- V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage ---- 1.85 2.1 IC = 6.5A VGE = 15V
---- 2.27 ---- V IC = 13A See Fig. 2, 5
---- 1.87 ---- IC = 6.5A, TJ = 150°C
V
∆V
g
I
CES
GE(th)
GE(th)
fe
Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ---- -11 ---- mV/°CVCE = VGE, IC = 250µA
Forward Transconductance T 1.4 4.3 ---- S VCE = 100V, IC = 6.5A
Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 1700 VGE = 0V, VCE = 600V, TJ = 150°C
V
FM
Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 8.0A See Fig. 13
---- 1.3 1.6 IC = 8.0A, TJ = 150°C
I
GES
Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Qge Gate - Emitter Charge (turn-on) ---- 4.5 6.8 nC VCC = 400V See Fig. 8
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
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Total Gate Charge (turn-on) ---- 27 41 IC = 6.5A
Gate - Collector Charge (turn-on) ---- 10 16 VGE = 15V
Turn-On Delay Time ---- 39 ---- TJ = 25°C
Rise Time ---- 15 ---- ns IC = 6.5A, VCC = 480V
Turn-Off Delay Time ---- 93 140 VGE = 15V, RG = 50Ω
Fall Time ---- 110 170 Energy losses include "tail" and
Turn-On Switching Loss ---- 0.16 ---- diode reverse recovery.
Turn-Off Switching Loss ---- 0.13 ---- mJ See Fig. 9, 10, 11, 18
Total Switching Loss ---- 0.29 0.3
Turn-On Delay Time ---- 38 ---- TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time ---- 17 ---- ns IC = 6.5A, VCC = 480V
Turn-Off Delay Time ---- 100 ---- VGE = 15V, RG = 50Ω
Fall Time ---- 220 ---- Energy losses include "tail" and
Total Switching Loss ---- 0.49 ---- mJ diode reverse recovery.
Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package
Input Capacitance ---- 530 ---- VGE = 0V
Output Capacitance ---- 39 ---- pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ---- 7.4 ---- ƒ = 1.0MHz
Diode Reverse Recovery Time ---- 37 55 ns TJ = 25°C See Fig.
---- 55 90 TJ = 125°C 14 IF = 8.0A
Diode Peak Reverse Recovery Current ---- 3.5 5.0 A TJ = 25°C See Fig.
---- 4.5 8.0 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge ---- 65 138 nC TJ = 25°C See Fig.
---- 124 360 TJ = 125°C 16 di/dt 200A/µs
/dt Diode Peak Rate of Fall of Recovery ---- 240 ---- A/µs TJ = 25°C See Fig.
During t
b
---- 210 ---- TJ = 125°C 17
12
)
A
A
0
10
IRG4BC20UD
Duty cycle : 50%
T = 125°C
J
T = 90 ° C
sink
Gate drive as specified
Turn-on los ses include
8
effe cts of reverse recovery
Pow er Dissipation = 13W
6
4
Load Current (A)
2
0
0.1 1 10 100
60% of rated
voltag e
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
100
10
(Load Current = I
T = 25°C
J
T = 150°C
J
of fundamental)
RMS
100
10
T = 150°C
J
T = 25°C
J
1
C
I , Collector-to-Emitter Current (A)
0.1
0.1 1 1
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
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A
1
C
I , Collector-to-E m itter C urrent (A)
0.1
4 6 8 10 12
V , Gate-to-Emitter Voltage (V)
GE
V = 10 V
CC
5µs PULSE WIDTH
Fig. 3 - Typical Transfer Characteristics
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