International Rectifier IRG4BC20SD-S Datasheet

PD -91794

IRG4BC20SD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH

Standard Speed IGBT

ULTRAFAST SOFT RECOVERY DIODE

FeaturesFeatures

Features

FeaturesFeatures

• Extremely low voltage drop 1.4Vtyp. @ 10A

• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.

• Very Tight Vce(on) distribution

• IGBT co-packaged with HEXFRED

TM

ultrafast,

G

ultra-soft-recovery anti-parallel diodes for use
in bridge configurations

• Industry standard D2Pak package

n-channel

Benefits

• Generation 4 IGBT's offer highest efficiencies
available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing

• Lower losses than MOSFET's conduction and
Diode losses

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 19
IC @ TC = 100°C Continuous Collector Current 10
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 7.0
I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current  38 A
Clamped Inductive Load Current  38

Diode Maximum Forward Current 38
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C

C

E

D Pak

V

= 600V

CES

V

CE(on) typ.

@VGE = 15V, IC = 10A

2

= 1.4V

W

Thermal Resistance

Parameter Typ. Max. Units

R

qJC

R

qJC

R

qJA

Wt Weight 1.44 ––– g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.

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Junction-to-Case - IGBT ––– 2.1
Junction-to-Case - Diode ––– 3.5 °C/W
Junction-to-Ambient ( PCB Mounted,steady-state)* ––– 80

IRG4BC20SD-S

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

DV

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown Voltageƒ 600 — — V VGE = 0V, IC = 250µA

/DT

Temperature Coeff. of Breakdown Voltage — 0.75 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.40 1.6 IC = 10A VGE = 15V

— 1.85 — V IC = 19A See Fig. 2, 5
— 1.44 — IC = 10A, TJ = 150°C

V

DV

g
I

CES

GE(th)

GE(th)

fe

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/DTJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance  2.0 5.8 — S VCE = 100V, IC = 10A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 1700 VGE = 0V, VCE = 600V, TJ = 150°C

V

FM

Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13

— 1.3 1.6 IC = 8.0A, TJ = 150°C

I

GES

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Qge Gate - Emitter Charge (turn-on) — 4.3 6.5 nC VCC = 400V See Fig. 8
Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

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Total Gate Charge (turn-on) — 27 40 IC = 10A

Gate - Collector Charge (turn-on) — 10 15 VGE = 15V
Turn-On Delay Time — 62 — TJ = 25°C
Rise Time — 32 — n s IC = 10A, VCC = 480V
Turn-Off Delay Time — 690 1040 VGE = 15V, RG = 50W
Fall Time — 480 730 Energy losses include "tail" and
Turn-On Switching Loss — 0.32 — diode reverse recovery.
Turn-Off Switching Loss — 2.58 — mJ See Fig. 9, 10, 11,18
Total Switching Loss — 2.90 4.5
Turn-On Delay Time — 64 — TJ = 150°C, See Fig. 10,11, 18
Rise Time — 35 — n s IC = 10A, VCC = 480V
Turn-Off Delay Time — 980 — VGE = 15V, RG = 50W
Fall Time — 800 — Energy losses include "tail" and
Total Switching Loss — 4.33 — mJ diode reverse recovery.
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 550 — VGE = 0V
Output Capacitance — 39 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 7.1 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.

—5590 TJ = 125°C 14 IF = 8.0A

Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig.

— 4.5 8.0 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.

— 124 360 TJ = 125°C 16 di/dt = 200Aµs

/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.

During t

b

— 210 — TJ = 125°C 17

3.0

2.0

Square wave:

60% of rated
v o l ta g e

IRG4BC20SD-S

For both:

Duty cycle: 50%
T = 125°C

J

T = 9 0 °C

sink

Gate drive as specified

Po w e r Dis s ipa tion = W

1.7

1.0

I

LOAD CURRENT (A)

Ideal diodes

0.0

0.1 1 10 100

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

100

10

T = 150 C

C

I , Collector Current (A)

°

J

T = 25 C

J

(Load Current = I

°

of fundamental)

RMS

100

10

T = 150 C

o

J

o

T = 25 C

J

V = 15V

GE

1

0.0 1.0 2.0 3.0 4.0

V , Collector-to-Emitter Voltage (V)

CE

20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11 12

V , Gate-to-Emitter Voltage (V)

GE

Fig. 3 - Typical Transfer Characteristics

V = 50V

CC

5µs PULSE WIDTH

C

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