International Rectifier IRG4BC20MD Datasheet
PD -94115
IRG4BC20MD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
FeaturesFeatures
Features
FeaturesFeatures
• Rugged: 10µsec short circuit capable at VGS=15V
• Low V
for 4 to 10kHz applications
CE(on)
C
Short Circuit Rated
Fast IGBT
V
= 600V
CES
• IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
• Industry standard TO-220AB package
Benefits
• Offers highest efficiency and short circuit
capability for intermediate applications
G
E
n-channel
V
CE(on) typ.
= 1.85V
@VGE = 15V, IC = 11A
• Provides best efficiency for the mid range frequency
(4 to 10kHz)
• Optimized for Appliance Motor Drives, Industrial (Short
Circuit Proof) Drives and Intermediate Frequency
Range Drives
• High noise immune "Positive Only" gate drive Negative bias gate drive not necessary
• For Low EMI designs- requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Driver IC's
TO-220AB
• Allows simpler gate drive
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 18
IC @ TC = 100°C Continuous Collector Current 11
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 7.0
t
sc
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 36 A
Clamped Inductive Load Current 36
Short Circuit Withstand Time 10 µ s
Diode Maximum Forward Current 36 A
Gate-to-Emitter Voltage ± 20 V
W
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ------ 2 (0.07) ------ g (oz)
Junction-to-Case - IGBT ------ ------ 2.1
Junction-to-Case - Diode ------ ------ 2.5 °C/W
Case-to-Sink, flat, greased surface ------ 0.50 -----Junction-to-Ambient, typical socket mount ----- ----- 80
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3/6/01
IRG4BC20MD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Qg e Gate - Emitter Charge (turn-on) ---- 5.3 8.0 nC VCC = 400V See Fig. 8
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
2 www.irf.com
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage ---- 0.67 ---- V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage ---- 1.85 2.1 IC = 11A VGE = 15V
---- 2.46 ---- V IC = 18A See Fig. 2, 5
---- 2.07 ---- IC = 11A, TJ = 150°C
Gate Threshold Voltage 4.0 ---- 6.5 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 3.0 3.6 ---- S VCE = 100V, IC = 11A
Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 2500 VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 8.0A See Fig. 13
---- 1.3 1.6 IC = 8.0A, TJ = 150°C
Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Total Gate Charge (turn-on) ---- 39 59 IC = 11A
Gate - Collector Charge (turn-on) ---- 20 30 VGE = 15V
Turn-On Delay Time ---- 21 ---- TJ = 25°C
Rise Time ---- 37 ---- ns IC = 11A, VCC = 480V
Turn-Off Delay Time ---- 463 690 VGE = 15V, RG = 50Ω
Fall Time ---- 340 510 Energy losses include "tail" and
Turn-On Switching Loss ---- 0.41 ---- diode reverse recovery.
Turn-Off Switching Loss ---- 2.03 ---- mJ See Fig. 9, 10, 11, 18
Total Switching Loss ---- 2.44 3.7
Turn-On Delay Time ---- 19 ---- TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time ---- 41 ---- ns IC = 6.5A, VCC = 480V
Turn-Off Delay Time ---- 590 ---- VGE = 15V, RG = 50Ω
Fall Time ---- 600 ---- Energy losses include "tail" and
Total Switching Loss ---- 3.49 ---- mJ diode reverse recovery.
Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package
Input Capacitance ---- 460 ---- VGE = 0V
Output Capacitance ---- 54 ---- pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ---- 14 ---- ƒ = 1.0MHz
Diode Reverse Recovery Time ---- 37 55 ns TJ = 25°C See Fig.
---- 55 90 TJ = 125°C 14 IF = 8.0A
Diode Peak Reverse Recovery Current ---- 3.5 5.0 A TJ = 25°C See Fig.
---- 4.5 8.0 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge ---- 65 138 nC TJ = 25°C See Fig.
---- 124 360 TJ = 125°C 16 di/dt 200A/µs
/dt Diode Peak Rate of Fall of Recovery ---- 240 ---- A/µs TJ = 25°C See Fig.
During t
b
---- 210 ---- TJ = 125°C 17
12
10
8
6
4
Load Current ( A )
60% of rated
voltage
IRG4BC20MD
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 13W
2
0
0.1 1 10 100
Idea l diod es
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
100
10
1
TJ = 150°C
TJ = 25°C
, Collector-to Emitter Current (A)
C
I
0.1
VGE= 15V
20µs PULSE WIDTH
0.1 1.0 10.0
V
, Collector-to-Emitter Voltage (V)
CE
of fundamental)
RMS
100
T = 150 C
10
1
C
I , Collector-to-Emitter Current (A)
0.1
6 8 10 12 14 16
°
J
°
T = 25 C
J
V , Gate-to-Emitter Voltage (V)
GE
V = 50V
CC
5µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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