International Rectifier IRG4BC20K-S Datasheet
INSULATED GATE BIPOLAR TRANSISTOR
FeaturesFeatures
Features
FeaturesFeatures
• High short circuit rating optimized for motor control,
t
=10µs, @360V VCE (start), TJ = 125°C,
sc
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
Benefits
• As a Freewheeling Diode we recommend our
HEXFRED
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBTs offer highest power
density motor controls possible
• This part replaces the IRGBC20K-S and
IRGBC20M-S devices
Absolute Maximum Ratings
TM
ultrafast, ultrasoft recovery diodes for
G
n-channel
PD - 91620A
IRG4BC20K-S
Short Circuit Rated
UltraFast IGBT
C
V
= 600V
CES
E
V
CE(on) typ.
@VGE = 15V, IC = 9.0A
2
D Pak
= 2.27V
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 9.0 A
I
CM
I
LM
t
sc
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C Maximum Power Dissipation 24
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current Q 32
Clamped Inductive Load Current R 32
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy S 29 mJ
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 1.44 ––– g
Junction-to-Case ––– 2.1
Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
Junction-to-Ambient ( PCB Mounted,steady-state)V ––– 40
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4/24/2000
IRG4BC20K-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
E
on
E
off
E
ts
L
E
C
ies
C
oes
C
res
Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.49 — V/°CVGE = 0V, IC = 1.0mA
J
— 2.00 — IC = 6.0A
Collector-to-Emitter Saturation Voltage
— 2.27 2.8 I
— 3.01 — IC = 16 A See Fig.2, 5
VV
— 2.43 — I
= 9.0A VGE = 15V
C
= 9.0A , TJ = 150°C
C
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -10 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance U 2.9 4.3 — SVCE = 100 V, IC = 9.0A
——250 VGE = 0V, VCE = 600V
Zero Gate Voltage Collector Current ——2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C
——1000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 34 51 IC = 9.0A
Gate - Emitter Charge (turn-on) — 4.9 7.4 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 14 21 VGE = 15V
Turn-On Delay Time — 28 —
Rise Time — 27 — TJ = 25°C
Turn-Off Delay Time — 150 220 IC = 9.0A, VCC = 480V
ns
Fall Time — 100 150 VGE = 15V, RG = 50Ω
Turn-On Switching Loss — 0.15 — Energy losses include "tail"
Turn-Off Switching Loss — 0.25 — mJ See Fig. 9,10,14
Total Switching Loss — 0.40 0.6
Short Circuit Withstand Time 10 —— µs VCC = 400V, TJ = 125°C
VGE = 15V, RG = 50Ω , V
Turn-On Delay Time — 28 — TJ = 150°C,
Rise Time — 29 — IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 190 — VGE = 15V, RG = 50Ω
ns
Fall Time — 190 — Energy losses include "tail"
Total Switching Loss — 0.68 — mJ See Fig. 11,14
Turn-On Switching Loss — 0.07 — TJ = 25°C, VGE = 15V, RG = 50Ω
Turn-Off Switching Loss — 0.13 — mJ IC = 6.0A, VCC = 480V
Total Switching Loss — 0.20 — Energy losses include "tail"
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 450 — VGE = 0V
Output Capacitance — 61 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 14 —ƒ = 1.0MHz
CPK
< 500V
Details of note Q through V are on the last page
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IRG4BC20K-S
)
5.0
4.0
3.0
2.0
Square wave:
60% of rated
voltag e
For both:
Duty cycle: 50%
T = 125°C
J
55°C
T = 90°C
sink
Gate drive as specified
Power Dissipation = 1.8W
Triangular wave:
Clamp voltage:
80% o f rated
Load Current ( A )
1.0
0.0
0.1 1 10 100
Ideal diodes
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
A
100
o
T = 25 C
J
T = 150 C
J
10
C
I , Collector-to-Emitter Current (A)
1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
o
100
10
C
I , Collector-to-Emitter Current (A)
1
5 10 15 20
o
T = 150 C
J
o
T = 25 C
J
V = 50V
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
CC
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
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