International Rectifier IRG4BC20KD-S Datasheet

PD -91598A

IRG4BC20KD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE

FeaturesFeatures

Features

FeaturesFeatures

• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short

C

Short Circuit Rated

UltraFast IGBT

V

= 600V

CES

Circuit Rated to 10µs @ 125°C, VGE = 15V

• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation

TM

• IGBT co-packaged with HEXFRED

ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations

• Industry standard D

2

Pak package

G

E

n-chan nel

V

CE(on) typ.

= 2.27V

@VGE = 15V, IC = 9.0A

Benefits

• Latest generation 4 IGBTs offer highest power
density motor controls possible.

•HEXFRED

TM

diodes optimized for performance
with IGBTs. Minimized recovery characteristics
reduce noise, EMI and switching losses.

•This part replaces the IRGBC20KD2-S and
IRGBC20MD2-S products.

• For hints see design tip 97003.

2

D Pak

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 9.0
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 7.0
I

FM

t

sc

V

GE

PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current Q 32 A
Clamped Inductive Load Current R 32

Diode Maximum Forward Current 32
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight 1.44 ––– g

Junction-to-Case - IGBT ––– 2.1
Junction-to-Case - Diode 2.5
Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
Junction-to-Ambient ( PCB Mounted,steady-state)U ––– 40

W

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4/24/2000

IRG4BC20KD-S

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown VoltageS 600 —— VVGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage — 0.49 — V/°CVGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.27 2.8 IC = 9.0A VGE = 15V

— 3.01 — VIC = 16A See Fig. 2, 5
— 2.43 — IC = 9.0A, TJ = 150°C

V
∆V
g
I

CES

GE(th)

GE(th)

fe

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -10 — mV/°CVCE = VGE, IC = 250µA

Forward Transconductance T 2.9 4.3 — SVCE = 100V, IC = 9.0A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 600V

——1000 VGE = 0V, VCE = 600V, TJ = 150°C

V

FM

Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13

— 1.3 1.6 IC = 8.0A, TJ = 150°C

I

GES

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q
Q
Q
t

d(on)

t

r

t

d(off)

t

f

E
E
E
t

sc

t

d(on)

t

r

t

d(off)

t

f

E
L
C
C
C
t

rr

I

rr

Q

di

g
ge
gc

on
off
ts

ts

E

ies
oes
res

rr

(rec)M

Total Gate Charge (turn-on) — 34 51 IC = 9.0A
Gate - Emitter Charge (turn-on) — 4.9 7.4 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 14 21 VGE = 15V
Turn-On Delay Time — 54 —
Rise Time — 34 — TJ = 25°C
Turn-Off Delay Time — 180 270 IC = 9.0A, VCC = 480V

ns

Fall Time — 72 110 VGE = 15V, RG = 50Ω
Turn-On Switching Loss — 0.34 — Energy losses include "tail"
Turn-Off Switching Loss — 0.30 — mJ and diode reverse recovery
Total Switching Loss — 0.64 0.96 See Fig. 9,10,14
Short Circuit Withstand Time 10 —— µs VCC = 360V, TJ = 125°C

VGE = 15V, RG = 50Ω , V
Turn-On Delay Time — 51 — TJ = 150°C, See Fig. 11,14
Rise Time — 37 — IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 220 — VGE = 15V, RG = 50Ω

ns

Fall Time — 160 — Energy losses include "tail"
Total Switching Loss — 0.85 — mJ and diode reverse recovery
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 450 — VGE = 0V
Output Capacitance — 61 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 14 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.

— 55 90 TJ = 125°C 14 IF = 8.0A

Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig.

— 4.5 8.0 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.

— 124 360 TJ = 125°C 16 di/dt = 200Aµs

/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.

During t

b

— 210 — TJ = 125°C 17

CPK

< 500V

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IRG4BC20KD-S

2.5

For both:

2.0

1.5

1.0

Square wave:

60 % o f r a ted
v o l tage

I

LOAD CURRENT (A)

0.5

0.0

0.1 1 10 100

Ideal diodes

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

Duty cycle: 50%
T = 125°C

J

55°C

T = 9 0°C

sink

Gate drive as specified

Pow e r D issip ation = W

1.8

100

o

T = 25 C



J

T = 150 C



J

10

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE



20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

o

100

10



C

I , Collector-to-Emitter Current (A)

1

5 10 15 20

o

T = 150 C

J

o

T = 25 C



J

V = 50V



5µs PULSE WIDTH

V , Gate-to-Emitter Voltage (V)

GE

CC

Fig. 3 - Typical Transfer Characteristics

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