International Rectifier IRG4BC20KD Datasheet
PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
FeaturesFeatures
Features
FeaturesFeatures
C
Short Circuit Rated
UltraFast IGBT
• Short Circuit Rated UltraFast: Optimized for
V
= 600V
high operating frequencies >5.0 kHz , and Short
CES
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
G
E
n-chan nel
V
CE(on) typ.
= 2.27V
@VGE = 15V, IC = 9.0A
• Industry standard TO-220AB package
Benefits
• Latest generation 4 IGBTs offer highest power density
motor controls possible
• HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGBC20KD2 and IRGBC20MD2
products
• For hints see design tip 97003
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 9.0
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 7.0
I
FM
t
sc
V
GE
PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current Q 32 A
Clamped Inductive Load Current R 32
Diode Maximum Forward Current 32
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ––– 2 (0.07) ––– g (oz)
Junction-to-Case - IGBT ––– ––– 2.1
Junction-to-Case - Diode ––– ––– 3.5 °C/W
Case-to-Sink, flat, greased surface ––– 0.50 –––
Junction-to-Ambient, typical socket mount ––– ––– 80
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4/24/2000
W
IRG4BC20KD
Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
Collector-to-Emitter Breakdown VoltageS 600 —— VVGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage — 0.49 — V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 2.27 2.8 IC = 9.0A VGE = 15V
— 3.01 — VIC = 16A See Fig. 2, 5
— 2.43 — IC = 9.0A, TJ = 150°C
V
∆V
g
I
CES
GE(th)
GE(th)
fe
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -10 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance T 2.9 4.3 — SVCE = 100V, IC = 9.0A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 600V
——1000 VGE = 0V, VCE = 600V, TJ = 150°C
V
FM
Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13
— 1.3 1.6 IC = 8.0A, TJ = 150°C
I
GES
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
Q
Q
t
d(on)
t
r
t
d(off)
t
f
E
E
E
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
L
C
C
C
t
rr
g
ge
gc
on
off
ts
ts
E
ies
oes
res
Total Gate Charge (turn-on) — 34 51 IC = 9.0A
Gate - Emitter Charge (turn-on) — 4.9 7.4 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 14 21 VGE = 15V
Turn-On Delay Time — 54 —
Rise Time — 34 — TJ = 25°C
Turn-Off Delay Time — 180 270 IC = 9.0A, VCC = 480V
ns
Fall Time — 72 110 VGE = 15V, RG = 50Ω
Turn-On Switching Loss — 0.34 — Energy losses include "tail"
Turn-Off Switching Loss — 0.30 — mJ and diode reverse recovery
Total Switching Loss — 0.64 0.96 See Fig. 9,10,14
Short Circuit Withstand Time 10 —— µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 50Ω , V
CPK
< 500V
Turn-On Delay Time — 51 — TJ = 150°C, See Fig. 11,14
Rise Time — 37 — IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 220 — VGE = 15V, RG = 50Ω
ns
Fall Time — 160 — Energy losses include "tail"
Total Switching Loss — 0.85 — mJ and diode reverse recovery
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 450 — VGE = 0V
Output Capacitance — 61 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 14 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.
— 55 90 TJ = 125°C 14 IF = 8.0A
I
rr
Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig.
— 4.5 8.0 TJ = 125°C 15 VR = 200V
Q
rr
Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.
— 124 360 TJ = 125°C 16 di/dt = 200Aµs
di
/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.
(rec)M
During t
b
— 210 — TJ = 125°C 17
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IRG4BC20KD
10
For both:
8
6
Square wave:
60 % o f r a ted
v o l tage
4
I
LOAD CURRENT (A)
2
0
0.1 1 10 100
Ideal diodes
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
Duty cycle: 50%
T = 125°C
J
T = 9 0°C
sink
Gate drive as specified
Pow e r D issip ation = W
13
100
o
T = 25 C
J
T = 150 C
J
10
C
I , Collector-to-Emitter Current (A)
1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
o
100
10
C
I , Collector-to-Emitter Current (A)
1
5 10 15 20
o
T = 150 C
J
o
T = 25 C
J
V = 50V
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
CC
Fig. 3 - Typical Transfer Characteristics
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