International Rectifier IRG4BC20FD-S Datasheet
PD -91783A
IRG4BC20FD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
FeaturesFeatures
Features
FeaturesFeatures
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard D
2
Pak package
G
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 9.0
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 8.0
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current Q 64 A
Clamped Inductive Load Current R 64
Diode Maximum Forward Current 60
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
C
E
Fast CoPack IGBT
V
= 600V
CES
V
CE(on) typ.
@VGE = 15V, IC = 9.0A
2
D Pak
= 1.66V
W
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJC
R
θJA
Wt Weight 1.44 ––– g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
Junction-to-Case - IGBT ––– 2.1
Junction-to-Case - Diode ––– 3.5 °C/W
Junction-to-Ambient ( PCB Mounted,steady-state)* –– – 80
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4/24/2000
IRG4BC20FD-S
Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
Collector-to-Emitter Breakdown VoltageS 600 —— VVGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage — 0.72 — V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 1.66 2.0 IC = 9.0A VGE = 15V
— 2.06 — VIC = 16A See Fig. 2, 5
— 1.76 — IC = 9.0A, TJ = 150°C
V
∆V
g
I
V
CES
GE(th)
GE(th)
fe
FM
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°CVCE = VGE, IC = 250µA
Forward TransconductanceT 2.9 5.1 — SVCE = 100V, IC = 9.0A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 600V
——1700 V
= 0V, VCE = 600V, TJ = 150°C
GE
Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13
— 1.3 1.6 IC = 8.0A, TJ = 150°C
I
GES
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 27 40 IC = 9.0A
Qg e Gate - Emitter Charge (turn-on) — 4.2 6.2 nC VCC = 400V See Fig. 8
Q
t
d(on)
t
r
t
d(off)
t
f
E
E
E
t
d(on)
t
r
t
d(off)
t
f
E
L
C
C
C
t
rr
gc
on
off
ts
ts
E
ies
oes
res
Gate - Collector Charge (turn-on) — 9.9 15 VGE = 15V
Turn-On Delay Time — 43 — TJ = 25°C
Rise Time — 20 — ns IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 240 360 VGE = 15V, RG = 50Ω
Fall Time — 150 220 Energy losses include "tail" and
Turn-On Switching Loss — 0.25 — diode reverse recovery.
Turn-Off Switching Loss — 0.64 — mJ See Fig. 9, 10, 18
Total Switching Loss — 0.89 1.3
Turn-On Delay Time — 41 — TJ = 150°C, See Fig. 10, 11, 18
Rise Time — 22 — ns IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 320 — VGE = 15V, RG = 50Ω
Fall Time — 290 — Energy losses include "tail" and
Total Switching Loss — 1.35 — mJ diode reverse recovery.
Internal Emitter Inductance — 7.5 — n H Measured 5mm from package
Input Capacitance — 540 — VGE = 0V
Output Capacitance — 37 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 7.0 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.
— 55 90 TJ = 125°C 14 IF = 8.0A
I
rr
Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig.
— 4.5 8.0 TJ = 125°C 15 VR = 200V
Q
rr
Diode Reverse Recovery Charge — 65 138 n C TJ = 25°C See Fig.
— 124 360 TJ = 125°C 16 di/dt = 200A/µs
di
/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.
(rec)M
During t
b
— 210 — TJ = 125°C 17
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3.0
2.0
Square wave:
60 % of ra ted
v o l tage
IRG4BC20FD-S
Mounted on PCB
For both:
Duty cycle: 50%
T = 125°C
J
T = 9 0°C
55°C
sink
Gate drive as specified
Pow e r D issip ation = W
1.75
1.0
I
LOAD CURRENT (A)
Ideal diodes
0.0
0.1 1 10 100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
100
10
o
T = 25 C
J
(Load Current = I
o
T = 150 C
J
of fundamental)
RMS
100
10
o
T = 150 C
J
o
T = 25 C
J
C
I , Collector-to-Emitter Current (A)
1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
C
I , Collector-to-Emitter Current (A)
1
5 6 7 8 9 10 11 12 13 14
V , Gate-to-Emitter Voltage (V)
GE
V = 50V
CC
5µs PULSE WIDTH
Fig. 3 - Typical Transfer Characteristics
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