International Rectifier IRG4BC20FD Datasheet

PD 91601A

IRG4BC20FD

INSULATED GATE BIPOLAR TRANSISTOR WITH

Fast CoPack IGBT

ULTRAFAST SOFT RECOVERY DIODE

Features

• Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).

• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3

• IGBT co-packaged with HEXFRED

TM

ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

G

n-channel

bridge configurations

• Industry standard TO-220AB package

Benefits

• Generation -4 IGBTs offer highest efficiencies
available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBTs. Minimized recovery characteristics require
less/no snubbing

• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 9.0
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 7.0
I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current Q 64 A
Clamped Inductive Load Current R 64

Diode Maximum Forward Current 32
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight ––– 2 (0.07) ––– g (oz)

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Junction-to-Case - IGBT ––– ––– 2.1
Junction-to-Case - Diode ––– ––– 3.5 °C/W
Case-to-Sink, flat, greased surface ––– 0.50 –––
Junction-to-Ambient, typical socket mount ––– ––– 80

C

E

V

= 600V

CES

V

CE(on) typ.

@VGE = 15V, IC = 9.0A

TO-220AB

= 1.66V

W

7/11/2000

IRG4BC20FD

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown VoltageS 600 —— VVGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage — 0.72 — V/°CVGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.66 2.0 IC = 9.0A VGE = 15V

— 2.06 — VIC = 16A See Fig. 2, 5
— 1.76 — IC = 9.0A, TJ = 150°C

V
∆V
g
I

CES

GE(th)

GE(th)

fe

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°CVCE = VGE, IC = 250µA

Forward Transconductance T 2.9 5.1 — SVCE = 100V, IC = 9.0A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 600V

——1700 VGE = 0V, VCE = 600V, TJ = 150°C

V

FM

Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13

— 1.3 1.6 IC = 8.0A, TJ = 150°C

I

GES

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Qge Gate - Emitter Charge (turn-on) — 4.2 6.2 nC VCC = 400V See Fig. 8
Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

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Total Gate Charge (turn-on) — 27 40 IC = 9.0A

Gate - Collector Charge (turn-on) — 9.9 15 VGE = 15V
Turn-On Delay Time — 43 — TJ = 25°C
Rise Time — 20 — ns IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 240 360 VGE = 15V, RG = 50Ω
Fall Time — 150 220 Energy losses include "tail" and
Turn-On Switching Loss — 0.25 — diode reverse recovery.
Turn-Off Switching Loss — 0.64 — mJ See Fig. 9, 10, 18
Total Switching Loss — 0.89 1.3
Turn-On Delay Time — 41 — TJ = 150°C, See Fig. 11, 18
Rise Time — 22 — ns IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 320 — VGE = 15V, RG = 50Ω
Fall Time — 290 — Energy losses include "tail" and
Total Switching Loss — 1.35 — mJ diode reverse recovery.
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 540 — VGE = 0V
Output Capacitance — 37 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 7.0 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.

— 55 90 TJ = 125°C 14 IF = 8.0A

Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig.

— 4.5 8.0 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.

— 124 360 TJ = 125°C 16 di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.

During t

b

— 210 — TJ = 125°C 17

IRG4BC20FD

14

For both:

12

10

8

Square wave:

60 % o f rate d

6

4

LOAD CURRENT (A)

2

0

0.1 1 10 100

v olta ge

I

Ideal diodes

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

Duty cycle: 50%
T = 125°C

J

T = 90° C

sink

Gate drive as specified

Pow er Dissipation = W

13

100

o

T = 25 C



J

o

T = 150 C



J

10

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE



20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

100

o

T = 150 C



J

10

o

T = 25 C



J

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11 12 13 14

V , Gate-to-Emitter Voltage (V)

GE

V = 50V

CC



5µs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics

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