International Rectifier IRG4BC20 Datasheet
Parameter Max. Units
V
CES
Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 9.0 A
I
CM
Pulsed Collector Current Q 64
I
LM
Clamped Inductive Load Current R 64
V
GE
Gate-to-Emitter Voltage ± 20 V
E
ARV
Reverse Voltage Avalanche Energy S 5.0 mJ
PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
°C
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
IRG4BC20F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91602A
E
C
G
n-channel
FeaturesFeatures
FeaturesFeatures
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Benefits
V
CES
= 600V
V
CE(on) typ.
= 1.66V
@VGE = 15V, IC = 9.0A
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 2.1
R
θCS
Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
R
θJA
Junction-to-Ambient, typical socket mount ––– 80
Wt Weight 2.0 (0.07) ––– g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
TO-220AB
4/17/2000
www.irf.com 1
IRG4BC20F
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage — 0.72 — V/°CVGE = 0V, IC = 1.0mA
— 1.66 2.0 IC = 9.0A VGE = 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage — 2.06 — IC = 16A See Fig.2, 5
— 1.76 — IC = 9.0A , TJ = 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆V
GE(th)
/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°CVCE = VGE, IC = 250µA
g
fe
Forward Transconductance U 2.9 5.1 — SVCE = 100V, IC = 9.0A
——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C
——1000 VGE = 0V, VCE = 600V, TJ = 150°C
I
GES
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 27 40 IC = 9.0A
Q
ge
Gate - Emitter Charge (turn-on) — 4.2 6.2 nC VCC = 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) — 9.9 15 VGE = 15V
t
d(on)
Turn-On Delay Time — 24 —
t
r
Rise Time — 17 — TJ = 25°C
t
d(off)
Turn-Off Delay Time — 190 280 IC = 9.0A, VCC = 480V
t
f
Fall Time — 210 320 VGE = 15V, RG = 50Ω
E
on
Turn-On Switching Loss — 0.07 — Energy losses include "tail"
E
off
Turn-Off Switching Loss — 0.60 — mJ See Fig. 9, 10, 14
E
ts
Total Switching Loss — 0.67 1.1
t
d(on)
Turn-On Delay Time — 24 — TJ = 150°C,
t
r
Rise Time — 17 — IC = 9.0A, VCC = 480V
t
d(off)
Turn-Off Delay Time — 300 — VGE = 15V, RG = 50Ω
t
f
Fall Time — 340 — Energy losses include "tail"
E
ts
Total Switching Loss — 1.30 — mJ See Fig. 11, 14
L
E
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
C
ies
Input Capacitance — 540 — VGE = 0V
C
oes
Output Capacitance — 37 — pF VCC = 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 7.0 —ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
Notes:
Q Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, RG = 50Ω,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
IRG4BC20F
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
1
10
100
1 10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20µs PULSE WIDTH
GE
T = 25 C
J
o
T = 150 C
J
o
1
10
100
5 6 7 8 9 10 11 12 13 14
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5µs PULSE WIDTH
CC
T = 25 C
J
o
T = 150 C
J
o
0
5
10
15
20
25
0.1 1 10 100
f, Frequency (kHz
)
A
60% of rated
volta ge
I
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
T = 125°C
T = 90° C
Ga te drive as specified
sink
J
Triangular wave:
I
Clamp voltage:
80% of rated
Power D issipation = 13W
Load Current ( A )
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