International Rectifier IRG4BC10UD Datasheet
PD 91677B
IRG4BC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
C
FeaturesFeatures
Features
FeaturesFeatures
• UltraFast: Optimized for high operating
up to 80 kHz in hard switching, >200 kHz in
resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous Generation
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 8.5
IC @ TC = 100°C Continuous Collector Current 5.0
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 4.0
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 38
PD @ TC = 100°C Maximum Power Dissipation 15
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current Q 34 A
Clamped Inductive Load Current R 34
Diode Maximum Forward Current 16
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range ° C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
G
E
n-channel
V
= 600V
CES
V
CE(on) typ.
@VGE = 15V, IC = 5.0A
tf (typ.) = 140ns
TO-220AB
= 2.15V
W
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight — 2 (0.07) — g (oz)
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Junction-to-Case - IGBT ——3.3
Junction-to-Case - Diode ——7.0 °C/W
Case-to-Sink, flat, greased surface — 0.50 —
Junction-to-Ambient, typical socket mount ——80
12/30/00
IRG4BC10UD
Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
Collector-to-Emitter Breakdown VoltageS 600 —— VVGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage — 0.54 — V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 2.15 2.6 IC = 5.0A VGE = 15V
— 2.61 — VI
— 2.30 — I
= 8.5A See Fig. 2, 5
C
= 5.0A, TJ = 150°C
C
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -8.7 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance T 2.8 4.2 — SVCE = 100V, IC = 5.0A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 600V
——1000 VGE = 0V, VCE = 600V, TJ = 150°C
V
FM
Diode Forward Voltage Drop — 1.5 1.8 V IC = 4.0A See Fig. 13
— 1.4 1.7 IC = 4.0A, TJ = 125°C
I
GES
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Qge Gate - Emitter Charge (turn-on) — 2.6 4.0 nC VCC = 400V See Fig. 8
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Details of note Q through T are on the last page
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Total Gate Charge (turn-on) — 15 22 IC = 5.0A
Gate - Collector Charge (turn-on) — 5.8 8.7 VGE = 15V
Turn-On Delay Time — 40 — TJ = 25°C
Rise Time — 16 — ns IC = 5.0A, VCC = 480V
Turn-Off Delay Time — 87 130 VGE = 15V, RG = 100Ω
Fall Time — 140 210 Energy losses include "tail" and
Turn-On Switching Loss — 0.14 — diode reverse recovery.
Turn-Off Switching Loss — 0.12 — mJ See Fig. 9, 10, 18
Total Switching Loss — 0.26 0.33
Turn-On Delay Time — 38 — TJ = 150°C, See Fig. 11, 18
Rise Time — 18 — ns IC = 5.0A, VCC = 480V
Turn-Off Delay Time — 95 — VGE = 15V, RG = 100Ω
Fall Time — 250 — Energy losses include "tail" and
Total Switching Loss — 0.45 — mJ diode reverse recovery.
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 270 — VGE = 0V
Output Capacitance — 21 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 3.5 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 28 42 ns TJ = 25°C See Fig.
— 38 57 TJ = 125°C 14 IF = 4.0A
Diode Peak Reverse Recovery Current — 2.9 5.2 A TJ = 25°C See Fig.
— 3.7 6.7 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge — 40 60 nC TJ = 25°C See Fig.
— 70 105 TJ = 125°C 16 di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 280 — A/µs TJ = 25°C See Fig.
During t
b
— 235 — TJ = 125°C 17
IRG4BC10UD
7
6
5
4
Square wave:
60 % of r a ted
3
2
LOAD CURRENT (A)
1
0
0.1 1 10 100
v o l tage
I
Ideal diodes
For both:
Duty cycle: 50%
T = 125° C
J
T = 9 0°C
sink
Gate drive as specified
Power Dissipation = W
9.2
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
100
o
T = 25 C
J
10
1
C
I , Collector-to-Emitter Current (A)
0.1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
20µs PULSE WIDTH
GE
T = 150 C
J
Fig. 2 - Typical Output Characteristics
o
100
10
C
I , Collector-to-Emitter Current (A)
1
5 6 7 8 9 10 11 12 13 14
o
T = 150 C
J
o
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
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