International Rectifier IRG4BC10SD-S, IRG4BC10SD-L Datasheet
PD - 94255
IRG4BC10SD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
IRG4BC10SD-L
ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFRED
TM
ultrafast,
G
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard D
2
Pak & TO-262 packages
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 14
IC @ TC = 100°C Continuous Collector Current 8.0
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 4.0
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 38
PD @ TC = 100°C Maximum Power Dissipation 15
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector CurrentQ 18 A
Clamped Inductive Load Current R 18
Diode Maximum Forward Current 18
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
C
E
D2Pak
IRG4BC10SD-S
Standard Speed
CoPack IGBT
V
= 600V
CES
V
CE(on) typ.
@VGE = 15V, IC = 2.0A
= 1.10V
TO-262
IRG4BC10SD-L
W
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
R
θJA
Wt Weight ––– 2.0(0.07) ––– g (oz)
Junction-to-Case - IGBT ––– ––– 3.3
Junction-to-Case - Diode ––– ––– 7.0 °C/W
Case-to-Sink, flat, greased surface ––– 0.50 –––
Junction-to-Ambient, typical socket mount U ––– ––– 80
Junction-to-Ambient (PCB Mount, steady state)V ––– ––– 40
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06/12/01
IRG4BC10SD-S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ T
Q
g
Qge Gate - Emitter Charge (turn-on) — 2.42 3.6 nC VCC = 400V See Fig. 8
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Details of note Q through T are on the last page
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Collector-to-Emitter Breakdown VoltageS 600 —— VVGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage — 0.64 — V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 1.58 1.8 IC = 8.0A VGE = 15V
— 2.05 — VIC = 14.0A See Fig. 2, 5
— 1.68 — IC = 8.0A, TJ = 150°C
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -9.5 — mV/°CVCE = VGE, IC = 250µA
Forward TransconductanceT 3.65 5.48 — SVCE = 100V, IC =8.0A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 600V
——1000 V
= 0V, VCE = 600V, TJ = 150°C
GE
Diode Forward Voltage Drop — 1.5 1.8 V IC =4.0A See Fig. 13
— 1.4 1.7 IC =4.0A, TJ = 150°C
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 15 22 IC = 8.0A
Gate - Collector Charge (turn-on) — 6.53 9.8 VGE = 15V
Turn-On Delay Time — 76 — TJ = 25°C
Rise Time — 32 — ns IC = 8.0A, VCC = 480V
Turn-Off Delay Time — 815 1200 VGE = 15V, RG = 100Ω
Fall Time — 720 1080 Energy losses include "tail" and
Turn-On Switching Loss — 0.31 — diode reverse recovery.
Turn-Off Switching Loss — 3.28 — mJ See Fig. 9, 10, 18
Total Switching Loss — 3.60 10.9
Total Switching Loss — 1.46 2.6 mJ IC = 5.0A
Turn-On Delay Time — 70 — TJ = 150°C, See Fig. 10,11, 18
Rise Time — 36 — ns IC = 8.0A, VCC = 480V
Turn-Off Delay Time — 890 — VGE = 15V, RG = 100Ω
Fall Time — 890 — Energy losses include "tail" and
Total Switching Loss — 3.83 — mJ diode reverse recovery.
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 280 — VGE = 0V
Output Capacitance — 30 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 4.0 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 28 42 ns TJ = 25°C See Fig.
— 38 57 TJ = 125°C 14 IF =4.0A
Diode Peak Reverse Recovery Current — 2.9 5.2 A TJ = 25°C See Fig.
— 3.7 6.7 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge — 40 60 nC TJ = 25°C See Fig.
— 70 105 TJ = 125°C 16 di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 280 — A/µs TJ = 25°C See Fig.
During t
b
— 235 — TJ = 125°C 17
IRG4BC10SD-S/L
10.0
8.0
60% of rated
6.0
4.0
Load Current ( A )
2.0
0.0
0.1 1 10 100
voltage
Ideal diodes
f , Frequency ( kHz )
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 9.2W for Heatsink Mount
Power Dissipation = 1.8W for typical
PCB socket Mount
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
100
of fundamental)
RMS
100
°
T = 25 C
J
T = 150 C
10
C
I , Collector Current (A)
1
0.5 1.0 1.5 2.0 2.5 3.0
V , Collector-to-Emitter Voltage (V)
CE
J
V = 15V
GE
80µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
°
10
C
I , Collector-to-Emitter Current (A)
1
6 8 10 12
Fig. 3 - Typical Transfer Characteristics
°
T = 150 C
J
°
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
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IRG4BC10SD-S/L
16
12
8
4
Maximum DC Collector Current(A)
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig. 4 - Maximum Collector Current vs. Case
Temperature
10
3.00
V = 15V
GE
80 us PULSE WIDTH
I = A16
2.50
2.00
1.50
CE
V , Collector-to-Emitter Voltage(V)
1.00
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
C
I = A8
C
I = A4
C
°
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
D = 0.50
thJC
1
0.20
0.10
0.05
P
DM
t
1 2
1
t
2
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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