International Rectifier IRG4BC10SD Datasheet

PD -91784A
IRG4BC10SD
INSULATED GATE BIPOLAR TRANSISTOR WITH
Standard Speed CoPack
ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFRED
TM
ultrafast,
G
ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing
• Lower losses than MOSFET's conduction and Diode losses
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 14 IC @ TC = 100°C Continuous Collector Current 8.0 I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 4.0 I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 38 PD @ TC = 100°C Maximum Power Dissipation 15 T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector CurrentQ 18 A Clamped Inductive Load Current R 18
Diode Maximum Forward Current 18 Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150 Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm)
C
E
V
= 600V
CES
V
CE(on) typ.
@VGE = 15V, IC = 2.0A
TO-220AB
IGBT
= 1.10V
W
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ––– 2.0(0.07) ––– g (oz)
Junction-to-Case - IGBT ––– ––– 3.3 Junction-to-Case - Diode ––– ––– 7.0 °C/W Case-to-Sink, flat, greased surface ––– 0.50 ––– Junction-to-Ambient, typical socket mount ––– ––– 80
www.irf.com 1
4/24/2000
IRG4BC10SD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)CES
V
CE(on)
V
GE(th)
V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ T
Q
g
Qge Gate - Emitter Charge (turn-on) 2.42 3.6 nC VCC = 400V See Fig. 8 Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Details of note Q through T are on the last page
2 www.irf.com
Collector-to-Emitter Breakdown VoltageS 600 —— VVGE = 0V, IC = 250µA
/T
Temperature Coeff. of Breakdown Voltage 0.64 V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage 1.58 1.7 IC = 8.0A VGE = 15V
2.05 VIC = 14.0A See Fig. 2, 5 — 1.68 IC = 8.0A, TJ = 150°C
Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA
/TJTemperature Coeff. of Threshold Voltage -9.5 — mV/°CVCE = VGE, IC = 250µA
Forward TransconductanceT 3.65 5.48 SVCE = 100V, IC =8.0A Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 600V
——1000 VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop 1.5 1.8 V IC =4.0A See Fig. 13
1.4 1.7 IC =4.0A, TJ = 150°C
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) 15 22 IC = 8.0A
Gate - Collector Charge (turn-on) 6.53 9.8 VGE = 15V Turn-On Delay Time 76 TJ = 25°C Rise Time 32 ns IC = 8.0A, VCC = 480V Turn-Off Delay Time 815 1200 VGE = 15V, RG = 100 Fall Time 720 1080 Energy losses include "tail" and Turn-On Switching Loss 0.31 diode reverse recovery. Turn-Off Switching Loss 3.28 mJ See Fig. 9, 10, 18 Total Switching Loss 3.60 10.9 Total Switching Loss 1.46 2.6 mJ IC = 5.0A Turn-On Delay Time 70 TJ = 150°C, See Fig. 10,11, 18 Rise Time 36 ns IC = 8.0A, VCC = 480V Turn-Off Delay Time 890 VGE = 15V, RG = 100 Fall Time 890 Energy losses include "tail" and Total Switching Loss 3.83 mJ diode reverse recovery. Internal Emitter Inductance 7.5 nH Measured 5mm from package Input Capacitance 280 VGE = 0V Output Capacitance 30 pF VCC = 30V See Fig. 7 Reverse Transfer Capacitance 4.0 —ƒ = 1.0MHz Diode Reverse Recovery Time 28 42 ns TJ = 25°C See Fig.
38 57 TJ = 125°C 14 IF =4.0A
Diode Peak Reverse Recovery Current 2.9 5.2 A TJ = 25°C See Fig.
3.7 6.7 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge 40 60 nC TJ = 25°C See Fig.
70 105 TJ = 125°C 16 di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery 280 A/µs TJ = 25°C See Fig.
During t
b
235 TJ = 125°C 17
IRG4BC10SD
10.0
8.0
6.0
4.0
Square wave:
60% of rated v olta g e
I
For both:
Duty cycle: 50% T = 125°C
J
T = 90 ° C
sink
Gate drive as specified
Pow er Dissipation = W
LOAD CURRENT (A)
2.0
0.0
0.1 1 10 100
Ideal diodes
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
100
of fundamental)
RMS
100
9.2
°
T = 25 C
J
T = 150 C
10
C
I , Collector Current (A)
1
0.5 1.0 1.5 2.0 2.5 3.0
V , Collector-to-Emitter Voltage (V)
CE
J
V = 15V
GE
80µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
°
10
C
I , Collector-to-Emitter Current (A)
1
6 8 10 12
Fig. 3 - Typical Transfer Characteristics
°
T = 150 C
J
°
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
www.irf.com 3
Loading...
+ 7 hidden pages