International Rectifier IRG4BC10S Datasheet
PD - 91786A
IRG4BC10S
INSULATED GATE BIPOLAR TRANSISTOR
Features
Standard Speed IGBT
C
• Extremely low voltage drop; 1.1V typical at 2A
• S-Speed: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives, up to 2KHz in
Chopper Applications
G
• Very Tight Vce(on) distribution
• Industry standard TO-220AB package
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency
available
• IGBTs optimized for specified application conditions
• Lower conduction losses than many Power
MOSFET''s
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 14
IC @ TC = 100°C Continuous Collector Current 8.0
I
CM
I
LM
V
GE
E
ARV
PDTC = 25°C Maximum Power Dissipation 38
PD @ TC = 100°C Maximum Power Dissipation 15
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector CurrentQ 18 A
Clamped Inductive Load Current R 18
Gate-to-Emitter Voltage ± 20
Reverse Voltage Avalanche Energy S 110 mJ
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
V
= 600V
CES
V
CE(on) typ.
@VGE = 15V, IC = 2.0A
TO-220AB
= 1.10V
W
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 2.0(0.07) ––– g (oz)
Junction-to-Case ––– 3.3
Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 50
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4/24/2000
IRG4BC10S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.64 — V/°CVGE = 0V, IC = 1.0mA
J
— 1.58 1.7 I
Collector-to-Emitter Saturation Voltage — 2.05 — IC = 14A See Fig.2, 5
— 1.68 — I
V
= 8.0A VGE = 15V
C
= 8.0A , TJ = 150°C
C
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -9.5 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance U 3.7 5.5 — SVCE = 100V, IC = 8.0A
Zero Gate Voltage Collector Current
——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
——1000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 15 22 IC = 8.0A
Gate - Emitter Charge (turn-on) — 2.4 3.6 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 6.5 9.8 VGE = 15V
Turn-On Delay Time — 25 —
Rise Time — 28 — TJ = 25°C
Turn-Off Delay Time — 630 950 IC = 8.0A, VCC = 480V
ns
Fall Time — 710 1100 VGE = 15V, RG = 100Ω
Turn-On Switching Loss — 0.14 — Energy losses include "tail"
Turn-Off Switching Loss — 2.58 — mJ See Fig. 9, 10, 14
Total Switching Loss — 2.72 4.3
Turn-On Delay Time — 24 — TJ = 150°C,
Rise Time — 31 — IC = 8.0A, VCC = 480V
Turn-Off Delay Time — 810 — VGE = 15V, RG = 100Ω
ns
Fall Time — 1300 — Energy losses include "tail"
Total Switching Loss — 3.94 — mJ See Fig. 11, 14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 280 — VGE = 0V
Output Capacitance — 30 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 4.0 —ƒ = 1.0MHz
Q Repetitive rating; V
= 20V, pulse width limited by
GE
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 13b )
R V
= 80%(V
CC
CES
), V
= 20V, L = 10µH, RG = 100Ω,
GE
U Pulse width 5.0µs, single shot.
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4BC10S
A
20
16
12
Square wave:
60% of rated
8
voltage
For both:
Duty cycle: 50%
T = 125°C
J
T = 90°C
sink
Gate driv e as speci fied
Power Dissipation = 9.2 W
Triangular wave:
Clamp voltage:
80% of rated
Load Current (A)
4
0
0.1 1 10 100
Ideal diod es
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
100
of fundamental)
RMS
100
°
T = 25 C
J
T = 150 C
10
C
I , Collector Current (A)
1
0.8 1.2 1.6 2.0 2.4 2.8 3.2
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
°
J
10
C
I , Collector-to-Emitter Current (A)
1
6 8 10 12
°
T = 150 C
J
°
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
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