International Rectifier IRG4BC10K Datasheet
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91733A
IRG4BC10K
Short Circuit Rated
UltraFast IGBT
Features
C
• Short Circuit Rated UltraFast: Optimized for high
V
= 600V
operating frequencies >5.0 kHz , and Short Circuit
CES
Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides higher efficiency
than Generation 3
• Industry standard TO-220AB package
G
E
V
CE(on) typ.
= 2.39V
@VGE = 15V, IC = 5.0A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 9.0
IC @ TC = 100°C Continuous Collector Current 5.0 A
I
CM
I
LM
t
sc
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 38
PD @ TC = 100°C Maximum Power Dissipation 15
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 600 V
Pulsed Collector CurrentQ 18
Clamped Inductive Load CurrentR 18
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy S 34 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
TO-220AB
W
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 2.0 (0.07) ––– g (oz)
Junction-to-Case ––– 3.3
Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 80
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4/24/2000
IRG4BC10K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Q Repetitive rating; V
max. junction temperature. ( See fig. 13b )
R V
(See fig. 13a)
Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.58 — V/°CVGE = 0V, IC = 1.0mA
J
— 2.39 2.62 IC = 5.0A VGE = 15V
Collector-to-Emitter Saturation Voltage — 3.25 — IC = 9.0A See Fig.2, 5
— 2.63 — IC = 5.0A , TJ = 150°C
V
Gate Threshold Voltage 3.0 — 6.5 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance U 1.2 1.8 — SVCE = 50 V, IC = 5.0A
Zero Gate Voltage Collector Current
——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
——1000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 19 29 IC = 5.0A
Gate - Emitter Charge (turn-on) — 2.9 4.3 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 9.8 15 VGE = 15V
Turn-On Delay Time — 11 —
Rise Time — 24 — TJ = 25°C
Turn-Off Delay Time — 51 77 IC = 5.0A, VCC = 480V
ns
Fall Time — 190 290 VGE = 15V, RG = 100Ω
Turn-On Switching Loss — 0.16 — Energy losses include "tail"
Turn-Off Switching Loss — 0.10 — mJ See Fig. 9,10,14
Total Switching Loss — 0.26 0.32
Short Circuit Withstand Time 10 —— µs VCC = 400V, TJ = 125°C
VGE = 15V, RG = 100Ω , V
Turn-On Delay Time — 11 — TJ = 150°C,
Rise Time — 27 — IC = 5.0A, VCC = 480V
Turn-Off Delay Time — 67 — VGE = 15V, RG = 100Ω
ns
Fall Time — 350 — Energy losses include "tail"
Total Switching Loss — 0.47 — mJ See Fig. 10,11,14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 220 — VGE = 0V
Output Capacitance — 29 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 7.5 —ƒ = 1.0MHz
= 80%(V
CC
CES
= 20V, pulse width limited by
GE
), V
= 20V, L = 10µH, RG = 100Ω,
GE
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
CPK
< 500V
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IRG4BC10K
A
14
12
10
8
Square wave:
60% of rated
6
Load Current (A)
4
2
0
0.1 1 10 100
voltage
Idea l diod es
For both:
Duty cycle: 50%
T = 125°C
J
T = 90°C
sink
Gate drive as specified
Power Dissipation = 9.2 W
Triangular wave:
Clamp voltage:
80% of rated
f, Frequency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
100
of fundamental)
RMS
100
°
T = 25 C
J
10
C
I , Collector Current (A)
1
1.0 2.0 3.0 4.0 5.0 6.0 7.0
V , Collector-to-Emitter Voltage (V)
CE
T = 150 C
V = 15V
20µs PULSE WIDTH
°
J
GE
Fig. 2 - Typical Output Characteristics
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10
T = 150 C
C
I , Collector-to-Emitter Current (A)
1
5 10 15 20
°
J
°
T = 25 C
J
V , Gate-to-Emitter Voltage (V)
GE
V = 50V
CC
5µs PULSE WIDTH
Fig. 3 - Typical Transfer Characteristics
5µs PULSE WIDTH
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