International Rectifier IRFZ48VS Datasheet
PD - 94051A
IRFZ48VS
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
G
D
V
R
DS(on)
= 60V
DSS
= 12mΩ
ID = 72A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
2
The D
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing
surface mount package. The D2Pak is suitable for high current
applications because of its low internal connection resistance and
D2Pak
can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 72
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 51 A
I
DM
PD @TC = 25°C Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.3 V/ns
T
J
T
STG
Pulsed Drain Current 290
Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 166 mJ
Avalanche Current 72 A
Repetitive Avalanche Energy 15 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
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Junction-to-Case ––– 1.0
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
5/18/01
IRFZ48VS
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 60 – –– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 12.0 mΩ VGS = 10V, ID = 43A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 35 ––– ––– S VDS = 25V, ID = 43A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 110 ID = 72A
Gate-to-Source Charge ––– ––– 29 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 36 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.6 ––– VDD = 30V
Rise Time ––– 200 ––– ID = 72A
Turn-Off Delay Time ––– 157 ––– RG = 9.1Ω
ns
Fall Time ––– 166 ––– RD = 0.34Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1985 ––– VGS = 0V
Output Capacitance ––– 496 ––– VDS = 25V
Reverse Transfer Capacitance ––– 91 ––– pF ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
2 www.irf.com
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
72
290
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 72A, VGS = 0V
Reverse Recovery Time ––– 70 100 ns TJ = 25°C, IF = 72A
Reverse Recovery Charge ––– 155 233 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 72A, di/dt ≤ 151A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
= 25°C, L = 64µH
J
= 72A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
D
S
IRFZ48VS
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
T = 25 C
J
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
2.5
72A
I =
D
°
T = 175 C
100
10
D
I , Drain-to-Source Current (A)
1
4 6 8 10 12 14
V , Gate-to-Source Voltage (V)
GS
J
V = 25V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C)
J
V =
Fig 4. Normalized On-Resistance
GS
10V
°
Vs. Temperature
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