International Rectifier IRFZ48R Datasheet
PD - 93958
IRFZ48R
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Drop in Replacement of the IRFZ48
G
D
S
R
DS(on)
V
DSS
= 50*A
I
D
= 60V
= 0.018Ω
for Linear/Audio Applications
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
TO-220AB
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50*
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 50* A
I
DM
PD @TC = 25°C Power Dissipation 190 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
T
J
T
STG
Pulsed Drain Current 290
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 100 mJ
Avalanche Current 50 A
Repetitive Avalanche Energy 19 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
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Junction-to-Case ––– 0.8
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
8/24/00
IRFZ48R
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 60 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.060 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.018 Ω VGS = 10V, ID = 43A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 27 ––– ––– SVDS = 25V, ID = 43A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
µA
nA
V
= 60V, VGS = 0V
DS
= 20V
GS
VGS = -20V
Total Gate Charge ––– ––– 110 ID = 72A
Gate-to-Source Charge ––– ––– 29 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 36 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.1 ––– VDD = 30V
Rise Time ––– 250 ––– ID = 72A
Turn-Off Delay Time ––– 210 ––– RG = 9.1Ω
ns
Fall Time ––– 250 ––– RD = 0.34Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 2400 ––– VGS = 0V
Output Capacitance ––– 1300 ––– VDS = 25V
Reverse Transfer Capacitance ––– 190 ––– pF ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
* Current limited by the package, (Die Current = 72A)
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Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
50*
290
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 72A, VGS = 0V
Reverse Recovery Time ––– 120 180 ns TJ = 25°C, IF = 72A
Reverse Recovery Charge ––– 0.50 0.80 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 72A, di/dt ≤ 200A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
= 25V, Starting TJ = 25°C, L = 22µH
= 72A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
G
D
S
IRFZ48R
)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
72A
I =
D
V =
10V
GS
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C
J
°
Fig 4. Normalized On-Resistance
Vs. Temperature
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