International Rectifier IRFZ44ZS, IRFZ44ZL, IRFZ44Z Datasheet

PD - 94797

AUTOMOTIVE MOSFET

Features

O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for Automotive applica­tions, this HEXFET® Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex­tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.

G

TO-220AB

IRFZ44Z

IRFZ44Z

IRFZ44ZS

IRFZ44ZL

HEXFET® Power MOSFET

D

S

D2Pak

IRFZ44ZS

R

DS(on)

V

= 55V

DSS

= 13.9mΩ

= 51A

I

D

TO-262

IRFZ44ZL

Absolute Maximum Ratings

ID @ TC = 25°C

I

@ TC = 100°C

D

I

DM

PD @TC = 25°C

V

GS

E

AS

E

(tested)

AS

I

AR

E

AR

T

J

T

STG

Continuous Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Thermal Resistance

R

JC

θ

R

CS

θ

R

JA

θ

R

JA

θ

Junct ion-to-Case

Case-to-Sink, Flat, Greased Surface

Junct ion-to-Ambient

Junct ion-to-Ambient (PCB Mount, steady state)

Parameter Units

@ 10V (Silicon Limited)

GS

@ 10V (See Fig. 9)

GS

c

d

i

c

h

See Fig.12a,12b,15,16

300 (1.6mm from case )

Max.

51

36

200

80

0.53

± 20

86

105

-55 to + 175

10 lbf•in (1.1N•m)

Parameter Typ. Max. Units

––– 1.87 °C/W

0.50 –––

––– 62

j

––– 40

A

W

W/°C

V

mJ

A

mJ

°C

HEXFET® is a registered trademark of International Rectifier.

www.irf.com 1

10/8/03

IRFZ44Z/S/L

/

g

g

Static @ TJ = 25°C (unless otherwise specified)

V

(BR)DSS

∆ΒV
R

DS(on)

V

GS(th)

DSS

Drain-to-Source Breakdown Voltage55–––––– V

∆T

Breakdown Voltage Temp. Coefficient––– 0.054 ––– V/°C

J

Static Drain-to-Source On-Resistance––– 11.1 13.9
Gate Threshold Voltage 2.0 ––– 4.0 V

fs Forward Transconductance 22 ––– ––– S

I

I

DSS

GSS

Drain-to-Source Leakage Current ––– ––– 20 µA

Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leaka
Q
Q
Q
t
t
t
t
L

L

C
C
C
C
C
C

g

gs

gd

d(on)

r

d(off)

f

D

S

iss

oss

rss

oss

oss

oss

eff.

Total Gate Charge ––– 29 43 nC

Gate-to-Source Charge ––– 7.2 11

Gate-to-Drain ("Miller") Charge ––– 12 18

Turn-On Delay Time ––– 14 ––– ns

Rise Time ––– 68 –––

Turn-Off Delay Time ––– 33 –––

Fall Time ––– 41 –––

Internal Drain Inductance ––– 4.5 ––– nH Between lead,

Internal Source Inductance ––– 7.5 ––– from package

Input Capacitance ––– 1420 ––– pF

Output Capacitance ––– 240 –––

Reverse Transf er Capacitance ––– 130 –––

Output Capacitance ––– 830 –––

Output Capacitance ––– 190 –––

Effective Output Capacitance ––– 300 –––

Parameter Min. Typ. Max. Units

––– ––– 250

e ––– ––– -200

Conditions

VGS = 0V, ID = 250µA
Reference to 25°C, I
V

= 10V, ID = 31A

Ω

m

GS

= VGS, ID = 250µA

V

DS

= 25V, ID = 31A

V

DS

V

= 55V, VGS = 0V

DS

V

= 55V, VGS = 0V, TJ = 125°C

DS

V

= 20V

GS

V

= -20V

GS

I

= 31A

D

VDS = 44V
V

GS

V

DD

I

= 31A

D

R

G

V

GS

6mm (0.25in.)

and center of die contact
V

GS

V

DS

ƒ = 1.0MHz, See Fig. 5
V

GS

V

GS

VGS = 0V, VDS = 0V to 44V

f

= 10V
= 28V

= 15Ω

f

= 10V

= 0V
= 25V

= 0V, VDS = 1.0V, ƒ = 1.0MHz
= 0V, VDS = 44V, ƒ = 1.0MHz

= 1mA

D

f

D

G

S

Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

Continuous Source Current ––– ––– 51

(Body Diode) A

Pulsed Source Current ––– ––– 200

(Body Diode)

c

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge ––– 17 26 nC

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Repetitive rating; pulse width limited by

Parameter Min. Typ. Max. Units

max. junction temperature. (See fig. 11).

 Limited by T

RG = 25Ω, I

, starting TJ = 25°C, L =0.18mH,

Jmax

= 31A, VGS =10V. Part not

AS

recommended for use above this value.

 I

≤ 31A, di/dt ≤ 840A/µs, V

SD

DD

≤ V

(BR)DSS

TJ ≤ 175°C.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

MOSFET symbol

showing the
integral reverse

p-n junction diode.
––– ––– 1.2 V
––– 23 35 ns

 C

eff. is a fixed capacitance that gives the same charging time

oss

as C

while V

oss

 Limited by T

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

TJ = 25°C, IS = 31A, VGS = 0V

T

= 25°C, IF = 31A, VDD = 28V

J

di/dt = 100A/µs

avalanche performance.

 This value determined from sample failure population. 100%

,

tested to this value in production.

 This is applied to D

2

Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.

 R

is rated at TJ of approximately 90°C.

θ

Conditions

f

.

DSS

G

2 www.irf.com

D

f

S

IRFZ44Z/S/L

1000

TOP 15V

)
A

(
t
n
e

r

100

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

D

I

BOTTOM 4.5V

10

1

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

60µs PULSE WIDTH

≤

Tj = 25°C

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

60µs PULSE WIDTH

≤

Tj = 175°C

)
A

(
t
n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

D

I

100

10

TOP 15V

BOTTOM 4.5V

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

)

Α

(

t
n
e

r

100

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

D

I

10

1.0

TJ = 175°C

TJ = 25°C

V

DS

≤60µs PULSE WIDTH

= 15V

2 4 6 8 10 12

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

60

)
S

(

50

e
c
n
a

t
c

40

u
d
n
o
c
s

30

n
a

r
T

d

r

20

a
w

r
o
F
,

s

10

f

G

TJ = 25°C

TJ = 175°C

V

DS

0

0 1020304050

ID,Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

= 10V

vs. Drain Current

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IRFZ44Z/S/L

10000

)
F
p

(
e
c
n
a

t

i

1000

c
a
p
a

C
,

C

100

V

= 0V, f = 1 MHZ

GS

C

= C

= C

= C

+ Cgd, C

gs

gd

+ C

ds

iss

C

rss

C

oss

C

iss

C

oss

C

rss

1 10 100

VDS, Drain-to-Source Voltage (V)

SHORTED

ds

gd

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

12.0
ID= 31A

)

10.0

V

(
e

g
a

t

l

8.0

o
V

e
c

r
u

6.0

o
S

­o

t

­e

t

4.0

a
G

,

S
G

2.0

V

0.0
0 5 10 15 20 25 30

VDS= 44V

VDS= 28V

VDS= 11V

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

)

100

A

(
t
n
e

r

r
u

C
n

i
a

r
D
e

s

r
e
v
e

R
,

D

0.10

S

I

0.01

TJ = 175°C

10

1

0.0 0.5 1.0 1.5 2.0

VSD, Source-to-Drain Voltage (V)

TJ = 25°C

Fig 7. Typical Source-Drain Diode

V

GS

= 0V

1000

OPERATION IN THIS AREA

)
A

(
t

100

n
e

r

r
u

C
e

c

r
u

10

o
S

­o

t

­n

i
a

r
D

1

,

D

Tc = 25°C

I

Tj = 175°C
Single Pulse

0.1
1 10 100 1000

LIMITED BY RDS(on)

100µsec

1msec

10msec

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

Forward Voltage

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