International Rectifier IRFZ44VS, IRFZ44VL Datasheet
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
PD - 94050A
IRFZ44VS
IRFZ44VL
HEXFET® Power MOSFET
D
S
R
DS(on)
V
= 60V
DSS
= 16.5mΩ
= 55A
I
D
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44VL) is available for low-profile applications.
D2Pak
IRFZ44VS
TO-262
IRFZ44VL
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 55
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 39 A
I
DM
PD @TC = 25°C Power Dissipation 115 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
T
J
T
STG
Pulsed Drain Current 220
Linear Derating Factor 0.77 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 115 mJ
Avalanche Current 55 A
Repetitive Avalanche Energy 11 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 1.3 °C/W
Junction-to-Ambient ––– 40
°C
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01/04/02
IRFZ44VS/IRFZ44VL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 60 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.062 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 16.5 mΩ VGS = 10V, ID = 31A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 24 ––– ––– SVDS = 25V, ID = 31A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
µA
nA
V
= 60V, VGS = 0V
DS
= 20V
GS
VGS = -20V
Total Gate Charge ––– ––– 67 ID = 51A
Gate-to-Source Charge ––– ––– 18 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 25 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 13 ––– VDD = 30V
Rise Time ––– 97 ––– ID = 51A
Turn-Off Delay Time ––– 40 ––– RG = 9.1Ω
ns
Fall Time ––– 57 ––– RD = 0.6Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1812 ––– VGS = 0V
Output Capacitance ––– 393 ––– VDS = 25V
Reverse Transfer Capacitance ––– 103 ––– pF ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
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Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
55
220
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 51A, VGS = 0V
Reverse Recovery Time ––– 70 105 ns TJ = 25°C, IF = 51A
Reverse Recovery Charge ––– 146 219 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 51A, di/dt ≤ 227A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
= 25°C, L = 89µH
J
= 51A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
D
S
IRFZ44VS/IRFZ44VL
)
1000
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
55A
I =
D
°
T = 25 C
J
100
10
D
I , Drain-to-Source Current (A)
T = 175 C
1
4 5 6 7 8 9 10 11 12
V , Gate-to-Source Voltage (V)
GS
°
J
V = 25V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C
J
V =
Fig 4. Normalized On-Resistance
GS
°
10V
vs. Temperature
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