International Rectifier IRFZ44NSTRR, IRFZ44NSTRL Datasheet
IRFZ44NS
IRFZ44NL
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRFZ44NS)
l Low-profile through-hole (IRFZ44NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
2
Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ44NL) is available for lowprofile applications.
Description
V
DSS
= 55V
R
DS(on)
= 0.0175Ω
I
D
= 49A
2
D P a k
TO-262
S
D
G
03/13/01
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.5
R
θJA
Junction-to-Ambient ––– 40 °C/W
Thermal Resistance
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
I
DM
Pulsed Drain Current 160
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 94 W
Linear Derating Factor 0.63 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
I
AR
Avalanche Current 25 A
E
AR
Repetitive Avalanche Energy 9.4 m J
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
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PD - 94153
IRFZ44NS/IRFZ44NL
2 www.irf.com
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V
t
rr
Reverse Recovery Time ––– 63 95 ns TJ = 25°C, IF = 25A
Q
rr
Reverse Recovery Charge ––– 170 260 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
49
160
A
Starting T
J
= 25°C, L = 0.48mH
RG = 25Ω, I
AS
= 25A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
I
SD
≤ 25A, di/dt ≤ 230A/µs, V
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– VVGS = 0V, ID = 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 17.5 mΩ VGS = 10V, ID = 25A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
g
fs
Forward Transconductance 19 ––– ––– SVDS = 25V, ID = 25A
––– ––– 25
µA
V
DS
= 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
VGS = -20V
Q
g
Total Gate Charge ––– ––– 63 ID = 25A
Q
gs
Gate-to-Source Charge ––– ––– 14 nC VDS = 44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 12 ––– VDD = 28V
t
r
Rise Time ––– 60 ––– ID = 25A
t
d(off)
Turn-Off Delay Time ––– 44 ––– RG = 12Ω
t
f
Fall Time ––– 45 ––– VGS = 10V, See Fig. 10
L
S
Internal Source Inductance ––– 7.5 ––– n H Between lead,
and center of die contact
C
iss
Input Capacitance ––– 1470 ––– VGS = 0V
C
oss
Output Capacitance ––– 360 ––– VDS = 25V
C
rss
Reverse Transfer Capacitance ––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche Energy ––– 530 150 mJ I
AS
= 25A, L = 0.47mH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
IRFZ44NS/IRFZ44NL
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Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
1
10
100
1000
0.1 1 10 100
I , D rain-to-S ource C urrent (A)
D
V , Drain- to -S o u rc e Voltage (V
)
DS
V G S
TO P 1 5V
10 V
8. 0V
7. 0V
6. 0V
5. 5V
5. 0V
BO T T O M 4.5V
20µs PUL SE WIDTH
T = 25°C
C
A
4.5V
1
10
100
1000
0.1 1 10 100
I , D ra in-to -S o u rc e Curre nt ( A )
D
V , Drain -to -S o u r ce Voltage (V
)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
A
4.5V
20µs PULSE WIDTH
T = 175 °C
C
1
10
100
1000
45678910
T = 25°C
J
GS
V , Gate- t o-S ource Vo lt age (V)
D
I , D ra in-to -S ou rce C urre n t (A)
A
V = 2 5 V
20µs PULSE WIDTH
DS
T = 175°C
J
0.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Ju nc tion T emperatur e (°C)
R , D ra in -to -S o u rc e On Re s ista n ce
DS(on)
(Norm alized )
V = 1 0 V
GS
A
I = 41 A
D
TJ = 25°C
TJ = 175°C
Fig 2. Typical Output Characteristics
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