International Rectifier IRFZ44ESTRR, IRFZ44ESTRL Datasheet
IRFZ44ES/L
HEXFET® Power MOSFET
PD - 9.1714
11/18/97
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 48
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 34 A
I
DM
Pulsed Drain Current 192
PD @TC = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 220 m J
I
AR
Avalanche Current 29 A
E
AR
Repetitive Avalanche Energy 11 mJ
dv/d t Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.4
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
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l Advanced Process Technology
l Surface Mount (IRFZ44ES)
l Low-profile through-hole (IRFZ44EL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44EL) is available for low-profile applications.
Description
V
DSS
= 60V
R
DS(on)
= 0.023Ω
ID = 48A
2
D P a k
TO-262
S
D
G
PRELIMINARY
IRFZ44ES/L
2 www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
t
rr
Reverse Recovery Time ––– 69 104 ns TJ = 25°C, IF = 29A
Q
rr
Reverse Recovery Charge ––– 177 266 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
48
192
A
Starting T
J
= 25°C, L = 520µH
RG = 25Ω, I
AS
= 29A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
I
SD
≤ 29A, di/dt ≤ 320A/µs, V
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRFZ44E data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
DV
(BR)DSS
/DT
J
Breakdown Voltage Temp. Coefficient ––– 0.063 –– – V/°C Reference to 25°C, ID = 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.023 Ω VGS = 10V, ID = 29A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
g
fs
Forward Transconductance 15 ––– ––– S VDS = 30V, ID = 29A
––– ––– 25
µA
VDS = 60V, VGS = 0V
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
VGS = -20V
Q
g
Total Gate Charge ––– ––– 60 ID = 29A
Q
gs
Gate-to-Source Charge ––– ––– 13 nC VDS = 48V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 12 ––– VDD = 30V
t
r
Rise Time ––– 6 0 ––– ID = 29A
t
d(off)
Turn-Off Delay Time ––– 70 ––– RG = 15Ω
t
f
Fall Time ––– 70 ––– RD = 1.1Ω, See Fig. 10
Between lead,
––– –––
and center of die contact
C
iss
Input Capacitance ––– 1360 ––– VGS = 0V
C
oss
Output Capacitance ––– 420 ––– pF VDS = 25V
C
rss
Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
IRFZ44ES/L
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1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
4 5 6 7 8 9 10
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 175 C
J
°
T = 25 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
48A
Fig 4. Normalized On-Resistance
Vs. Temperature
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