International Rectifier IRFZ44E Datasheet
PD - 91671B
TO-220AB
IRFZ44E
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
D
R
DS(on)
V
DSS
= 60V
= 0.023Ω
ID = 48A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 48
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 34 A
I
DM
PD @TC = 25°C Power Dissipation 110 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 192
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 220 mJ
Avalanche Current 29 A
Repetitive Avalanche Energy 11 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
www.irf.com 1
Junction-to-Case ––– 1.4
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
7/6/99
IRFZ44E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 60 – –– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.063 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.023 Ω VGS = 10V, ID = 29A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 15 ––– ––– S VDS = 30V, ID = 29A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 60 ID = 29A
Gate-to-Source Charge ––– ––– 13 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 12 ––– VDD = 30V
Rise Time ––– 60 ––– ID = 29A
Turn-Off Delay Time ––– 70 ––– RG = 15Ω
ns
Fall Time ––– 70 ––– RD = 1.1Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1360 ––– VGS = 0V
Output Capacitance ––– 420 ––– VDS = 25V
Reverse Transfer Capacitance ––– 160 ––– pF ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
2 www.irf.com
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
48
192
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
Reverse Recovery Time ––– 69 104 ns TJ = 25°C, IF = 29A
Reverse Recovery Charge ––– 177 266 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 29A, di/dt ≤ 320A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
= 25°C, L = 520µH
J
= 29A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
D
S
IRFZ44E
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
I =
D
48A
°
T = 25 C
J
100
T = 175 C
J
10
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
4 5 6 7 8 9 10
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
www.irf.com 3
Loading...