International Rectifier IRFZ24N Datasheet
HEXFET® Power MOSFET
PD - 91354A
IRFZ24N
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFET
®
power MOSFETs from
G
D
V
= 55V
DSS
R
S
DS(on)
ID = 17A
= 0.07Ω
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A
I
DM
PD @TC = 25°C Power Dissipation 45 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 68
Linear Derating Factor 0.30 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 71 mJ
Avalanche Current 10 A
Repetitive Avalanche Energy 4.5 mJ
Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case –––– –––– 3.3
Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
Junction-to-Ambient –––– –––– 62
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IRFZ24N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 –– – ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.07 Ω VGS = 10V, ID = 10A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 4.5 ––– – –– S VDS = 25V, ID = 10A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
––– ––– 25 VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
µA
nA
Total Gate Charge ––– –– – 20 ID = 10A
Gate-to-Source Charge ––– ––– 5.3 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 7. 6 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 4.9 ––– VDD = 28V
Rise Time ––– 34 ––– ID = 10A
Turn-Off Delay Time ––– 19 ––– RG = 24Ω
ns
Fall Time ––– 27 ––– RD = 2.6Ω, See Fig. 10
Internal Drain Inductance
Internal Source Inductance ––– –––
–––
–––
4.5
7.5
–––
–––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 370 ––– VGS = 0V
Output Capacitance ––– 140 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 65 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 17
A
––– ––– 68
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 10A, VGS = 0V
Reverse Recovery Time ––– 56 83 ns TJ = 25°C, IF = 10A
Reverse RecoveryCharge ––– 120 180 nC di/dt = 100A/µs
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 1.0mH
DD
RG = 25Ω, I
= 10A. (See Figure 12)
AS
I
≤ 10A, di/dt ≤ 280A/µs, V
SD
DD
≤ V
(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
,
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D
S
IRFZ24N
)
A
)
A
)
A
A
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
D
I , Drain-to-Source Current (A )
4.5V
20µs PULSE WIDTH
T = 2 5° C
1
0.1 1 10 100
V , Dra in -to - S o ur c e Vo ltage (V
DS
C
Fig 1. Typical Output Characteristics,
TJ = 25oC
100
100
VGS
TOP 15V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
BOTTOM 4.5V
10
4.5V
D
I , Drain-to-Source Current (A )
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
V , Dra in -to -S o u r ce V o ltage (V
DS
C
Fig 2. Typical Output Characteristics,
TJ = 175oC
3.0
I = 17 A
D
2.5
T = 25°C
J
T = 175°C
J
10
D
I , D ra in-to- So urc e C urre n t (A)
1
45678910
V , Gate -to-S o urce Vo ltage (V
GS
V = 25V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(N ormalized )
1.0
0.5
DS (on)
R , D ra in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
V = 10 V
GS
Vs. Temperature
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