International Rectifier IRFY440CM Datasheet
Provisional Data Sheet No. PD 9.1292B
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HEXFET® POWER MOSFET
500 Volt, 0.85Ω HEXFET
HEXFET technology is the key to International Rectifier’ s
advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited
for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between
the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
Product Summary
Features
n Hermetically sealed
n Electrically isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic eyelets
IRFY440CM
N-CHANNEL
Part Number BV
DSS
IRFY440CM 500V 0.85Ω 7.0A
R
DS(on)
I
D
Absolute Maximum Ratings
ID @ VGS=10V , TC = 25°C Continuous Drain Current 7.0
ID @ VGS=10V , TC = 100°C Continuous Drain Current 4.4 A
I
DM
PD @ TC = 25°C Max. Power Dissipation 100 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns
T
J
T
stg
Parameter IRFY440CM Units
Pulsed Drain Current 28
Linear Derating Factor 0.8 W/K
Gate-to-Source V oltage ±20 V
Single Pulse Avalance Energy 510 mJ
Avalance Current 7.0 A
Repetitive Avalanche Energy 10 mJ
Operating Junction -55 to 150
Storage Temperature Range °C
Lead Temperature 300 (0.063 in (1.6mm) from case for 10 sec)
Weight 4.3(typical) g
IRFY440CM Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
tr Rise Time — — 73 VGS = 10V
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0mA
/∆TJTemperature Coefficient of Breakdown — 0.78 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source — — 0.85 VGS = 10V, ID = 4.4A
On-State Resistance — — 0.95
Gate Threshold V oltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forw ard Tr ansconductance 4.7 — — S ( )VDS ≥ 15V, IDS = 4.4A
Zero Gate Voltage Drain Current — — 25
— — 250 VDS = 0.8 x max. rating
Ω
VGS = 10V, ID = 7.0A
Ω
V
DS
µA
= 0.8 x max. rating,VGS = 0V
VGS = 0V, TJ = 125°C
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
nA
Total Gate Charge 27.3 — 68.5 VGS = 10V, ID = 7.0A
Gate-to-Source Charge 2.0 — 12.5 VDS = Max. Rating x 0.5
nC
Gate-to-Drain (‘Miller’) Charge 11.1 — 42.4 see figures 6 and 13
T urn-On Dela y T ime — — 21 VDD = 250V, ID = 7.0A, RG = 9.1Ω
Turn-Off Delay Time — — 72
ns
Fall Time — — 51 see figure 10
Internal Drain Inductance — 8.7 —
Internal Source Inductance — 8.7 —
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
nH
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
Input Capacitance — 1300 — VGS = 0v, VDS = 25V
Output Capacitance — 310 — pF f = 1.0MHz.
Reverse T ransfer Capacitance — 120 — see figure 5
Modified MOSFET
showing the internal
inductances.
symbol
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max
I
Continuous Source Current (Body Diode) — — 7.0
S
I
Pulse Source Current (Body Diode) —— 28
SM
VSDDiode Forward V oltage — — 1.5 V Tj = 25°C, IS = 7.0A, VGS = 0V
t
Rev erse Recov ery Time — — 70 0 ns Tj = 25°C, IF = 7.0A, di/dt ≤ 100 A/µs
rr
Q
Reverse Recovery Charge — — 8.9 µC VDD ≤ 50 V
RR
t
Forw ard T u rn-On Time
on
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
Junction-to-Case — — 1.25
thJC
R
Junction-to-Ambient — — 80 K/W Typical socket mount
thJA
R
Case-to-Sink — 0.21 — Mounting surface flat, smooth
thCS
Units
Modified MOSFET
A
integr al reverse p-n junction rectifier.
Test Conditions
symbol showing the
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