International Rectifier IRFY430CM Datasheet

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HEXFET® POWER MOSFET
500 V olt, 1.5 HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­cient geometry design achieves very low on-state re­sistance combined with high transconductance.
HEXFET transistors also feature all of the well-estab­lished advantages of MOSFETs, such as voltage con­trol, very fast switching, ease of paralleling and electri­cal parameter temperature stability. They are well-suited for applications such as switching power supplies, mo­tor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package elimi­nates the need for additional isolating material between the device and the heatsink. This improves thermal ef fi­ciency and reduces drain capacitance.
Product Summary
Features
n Hermetically Sealed n Electrically Isolated n Simple Drive Requirements n Ease of Paralleling n Ceramic Eyelets
IRFY430CM
N-CHANNEL
Part Number BV
DSS
IRFY430CM 500V 1.5 4.5A
R
DS(on)
I
D
Absolute Maximum Ratings
ID @ VGS=10V, TC = 25°C Continuous Drain Current 4.5 ID @ VGS=10V, TC = 100°C Continuous Drain Current 2.8 A I
DM
PD @ TC = 25°C Max. Power Dissipation 75 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns T
J
T
stg
Parameter IRFY430CM Units
Pulsed Drain Current 18
Linear Derating Factor 0. 6 W/K Gate-to-Source Voltage ±20 V Single Pulse Avalance Energy 280 mJ Avalance Current 4.5 A Repetitive Avalanche Energy 7.5 mJ
Operating Junction -55 to 150 Storage T emperature Range °C Lead Tempera ture 300 (0.063 in (1.6mm) from
case for 10 sec)
Weight 4.3 (typical) g
°C
IRFY430CM Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. T yp. Max. Units T est Conditions
BV
DSS
BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 500 V VGS = 0V, ID = 1.0mA
/TJTemperature Coefficient of Breakdown 0.78 V/°C Reference to 25°C, ID = 1.0mA
Voltage Static Drain-to-Source 1.5 VGS = 10V, ID = 2.8A
On-State Resistance 1.8 VGS = 10V, ID = 4.5A Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 1.5 S ( )VDS 15V, IDS = 2.8A Zero Gate Voltage Drain Current 25
250 VDS = 0.8 x max. rating
Gate-to-Source Leakage Forward 1 00 VGS = 20V Gate-to-Source Leakage Reverse -100 VGS = -20V
µA
nA
Total Gate Charge 19.8 29.5 VGS = 10V, ID = 4.5A Gate-to-Source Charge 2.2 4. 6 VDS = Max. Rating x 0.5
nC Gate-to-Drain (‘Miller’) Charge 5.5 19.7 see figures 5 and 13 Turn-On Delay Time 3 5 VDD = 250V, ID = 4.5A, Rise Tim e 30 RG = 7.5, V Turn-Off Delay Time 55
ns Fall Time 30 see figure 10
Internal Drain Inductance 8.7
Internal Source Inductance 8.7
nH
Input Capacitance 6.0 VGS = 0v, VDS = 25V Output Capacitance 135 pF f = 1.0MHz. Reverse Transfer Capacitance 65
V
DS
= 0.8 x max. rating,VGS = 0V
VGS = 0V, TJ = 25°C
= 10V
GS
Measured from the drain lead, 6mm (0.25 in.) from package to center of die.
Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
Modified MOSFET showing the internal
inductances.
see figure 5
symbol
Source-Drain Diode Ratings and Characteristics
Parameter Min. T yp. Max.
I
Continuous Source Current (Body Diode) 4.5
S
I
Pulse Source Current (Body Diode) —— 18
SM
VSDDiode Forward Voltage 1.4 V Tj = 25°C, IS = 4.5A, VGS = 0V t
Reverse Recovery Time 900 ns Tj = 25°C, IF = 4.5A, di/dt 100 A/µs
rr
Q
Reverse Recovery Charge 7.0 µC VDD 50V
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
Junction-to-Case 1.67
thJC
R
Junction-to-Ambient 80 K/W Typical socket mount
thJA
R
Case-to-Sink 0.21 Mounting surface flat, smooth
thCS
Units
Modified MOSFET
A
integral reverse p-n junction rectifier.
T est Conditions
symbol showing the
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