International Rectifier IRFY430CM Datasheet
Provisional Data Sheet No. PD 9.1291B
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HEXFET® POWER MOSFET
500 V olt, 1.5Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited
for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between
the device and the heatsink. This improves thermal ef ficiency and reduces drain capacitance.
Product Summary
Features
n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelets
IRFY430CM
N-CHANNEL
Part Number BV
DSS
IRFY430CM 500V 1.5Ω 4.5A
R
DS(on)
I
D
Absolute Maximum Ratings
ID @ VGS=10V, TC = 25°C Continuous Drain Current 4.5
ID @ VGS=10V, TC = 100°C Continuous Drain Current 2.8 A
I
DM
PD @ TC = 25°C Max. Power Dissipation 75 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns
T
J
T
stg
Parameter IRFY430CM Units
Pulsed Drain Current 18
Linear Derating Factor 0. 6 W/K
Gate-to-Source Voltage ±20 V
Single Pulse Avalance Energy 280 mJ
Avalance Current 4.5 A
Repetitive Avalanche Energy 7.5 mJ
Operating Junction -55 to 150
Storage T emperature Range °C
Lead Tempera ture 300 (0.063 in (1.6mm) from
case for 10 sec)
Weight 4.3 (typical) g
°C
IRFY430CM Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. T yp. Max. Units T est Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0mA
/∆TJTemperature Coefficient of Breakdown — 0.78 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source — — 1.5 VGS = 10V, ID = 2.8A
Ω
On-State Resistance — — 1.8 VGS = 10V, ID = 4.5A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 1.5 — — S ( )VDS ≥ 15V, IDS = 2.8A
Zero Gate Voltage Drain Current — — 25
— — 250 VDS = 0.8 x max. rating
Gate-to-Source Leakage Forward — — 1 00 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Ω
µA
nA
Total Gate Charge 19.8 — 29.5 VGS = 10V, ID = 4.5A
Gate-to-Source Charge 2.2 — 4. 6 VDS = Max. Rating x 0.5
nC
Gate-to-Drain (‘Miller’) Charge 5.5 — 19.7 see figures 5 and 13
Turn-On Delay Time — — 3 5 VDD = 250V, ID = 4.5A,
Rise Tim e — — 30 RG = 7.5, V
Turn-Off Delay Time — — 55
ns
Fall Time — — 30 see figure 10
Internal Drain Inductance — 8.7 —
Internal Source Inductance — 8.7 —
nH
Input Capacitance — 6.0 — VGS = 0v, VDS = 25V
Output Capacitance — 135 — pF f = 1.0MHz.
Reverse Transfer Capacitance — 65 —
V
DS
= 0.8 x max. rating,VGS = 0V
VGS = 0V, TJ = 25°C
= 10V
GS
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
Modified MOSFET
showing the internal
inductances.
see figure 5
symbol
Source-Drain Diode Ratings and Characteristics
Parameter Min. T yp. Max.
I
Continuous Source Current (Body Diode) — — 4.5
S
I
Pulse Source Current (Body Diode) —— 18
SM
VSDDiode Forward Voltage — — 1.4 V Tj = 25°C, IS = 4.5A, VGS = 0V
t
Reverse Recovery Time — — 900 ns Tj = 25°C, IF = 4.5A, di/dt ≤ 100 A/µs
rr
Q
Reverse Recovery Charge — — 7.0 µC VDD ≤ 50V
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
Junction-to-Case — — 1.67
thJC
R
Junction-to-Ambient — — 80 K/W Typical socket mount
thJA
R
Case-to-Sink — 0.21 — Mounting surface flat, smooth
thCS
Units
Modified MOSFET
A
integral reverse p-n junction rectifier.
T est Conditions
symbol showing the
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