International Rectifier IRFY340CM Datasheet
Provisional Data Sheet No. PD 9.1290B
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HEXFET® POWER MOSFET
400 Volt, 0.55Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited
for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between
the device and the heatsink. This improves thermal ef ficiency and reduces drain capacitance.
Product Summary
Features
n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelets
IRFY340CM
N-CHANNEL
Part Number BV
DSS
IRFY340CM 400V 0.55Ω 8.7A
R
DS(on)
I
D
Absolute Maximum Ratings
ID @ VGS=10V, TC = 25°C Continuous Drain Current 8.7
ID @ VGS=10V, TC = 100°C Continuous Drain Current 5.5 A
I
DM
PD @ TC = 25°C Max. Power Dissipation 100 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
T
J
T
stg
Parameter IRFY340CM Units
Pulsed Drain Current 35
Linear Derating Factor 0.8 W/K
Gate-to-Source Voltage ±20 V
Single Pulse A valance Energy 520 m J
Avalance Current 8.7 A
Repetitive Avalanche Energy 10 mJ
Operating Junction -55 to 150
Storage T emperature Range °C
Lead Tempera ture 300 (0.063 in (1.6mm) from
case for 10 sec)
Weight 4.3 (typical) g
°C
IRFY340CM Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. T yp. Max. Units Test Conditions
BV
DSS
∆BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
tr Rise Time — — 92 VGS = 10V
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 400 — — V VGS = 0V , ID = 1.0mA
/∆TJT emperature Coefficient of Breakdown — 0.46 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source — — 0.55 VGS = 10V, ID = 5.5A
Ω
On-State Resistance — — 0.63 VGS = 10V , ID = 8.7A
Gate Threshold V oltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 4.9 — — S ( )VDS ≥ 15V, IDS = 5.5A
Zero Gate Voltage Drain Current — — 25
— — 250 VDS = 0.8 x max. rating
µA
Ω
V
DS
= 0.8 x max. rating,VGS = 0V
VGS = 0V, TJ = 25°C
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
nA
T otal Gate Charge 32 — 6 5 VGS = 10V , ID = 8.7A
Gate-to-Source Charge 2.2 — 1 0 VDS = Max. Rating x 0.5
nC
Gate-to-Drain (‘Miller’) Charge 13.8 — 40.5 see figures 6 and 13
Turn-On Delay T ime — — 25 VDD = 200V , ID = 8.7A, RG = 9.1Ω
Turn-Off Delay T ime — — 79
ns
Fall Time — — 58 see figure 10
Internal Drain Inductance — 8.7 —
Internal Source Inductance — 8.7 —
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
nH
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
Input Capacitance — 1400 — VGS = 0v, VDS = 25V
Output Capacitance — 35 0 — pF f = 1.0MHz.
Reverse Transfer Capacitance — 230 —
see figure 5
Modified MOSFET
showing the internal
inductances.
symbol
Source-Drain Diode Ratings and Characteristics
Parameter Min. T yp. Max.
I
Continuous Source Current (Body Diode) — — 8.7
S
I
Pulse Source Current (Body Diode) —— 35
SM
VSDDiode Forward Voltage — — 1.5 V Tj = 25°C, IS = 8.7A, VGS = 0V
t
Reverse Recovery Time — — 600 ns Tj = 25°C, IF = 8.7A, di/dt ≤ 100 A/µs
rr
Q
Reverse Recovery Charge — — 5.6 µ C VDD ≤ 50 V
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
Junction-to-Case — — 1.25
thJC
R
Junction-to-Ambient — — 80 K/W Typical socket mount
thJA
R
Case-to-Sink — 0.21 — Mounting surface flat, smooth
thCS
Units
Modified MOSFET
A
integral reverse p-n junction rectifier.
T est Conditions
symbol showing the
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