International Rectifier IRFY130CM Datasheet
Provisional Data Sheet No. PD 9.1286C
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HEXFET® POWER MOSFET
100 Volt, 0.18Ω HEXFET
HEXFET technology is the key to International Rectifier’ s
advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited
for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between
the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
Product Summary
Features
n Hermetically sealed
n Electrically isolated
n Simple drive requirements
n Ease of paralleling
n Ceramic eyelets
IRFY130CM
N-CHANNEL
Part Number BV
DSS
IRFY130CM 100V 0.18Ω 14.4A
R
DS(on)
I
D
Absolute Maximum Ratings
ID @ VGS=10V, TC = 25°C Continuous Drain Current 14.4
ID @ VGS=10V , TC = 100°C Continuous Drain Current 9.1 A
I
DM
PD @ TC = 25°C Max. Pow er Dissipation 75 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
T
J
T
stg
*ID current limited by pin diameter
Parameter IRFY130CM Units
Pulsed Drain Current 57.6
Linear Derating F actor 0.6 W/K
Gate-to-Source Voltage ±20 V
Single Pulse Av alance Energy 69 mJ
Av alance Current 14.4 A
Repetitive Av alanche Energy 7.5 mJ
Operating Junction -55 to 150
Storage Temperature Range °C
Lead Temperature 300 (0.063 in (1.6mm) from case for 10 sec)
Weight 4.3(typical) g
IRFY130CM Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
tr Rise Time — — 75 VGS = 10V
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown V oltage 10 0 — — V VGS = 0V, ID = 1.0mA
/∆TJT emperature Coefficient of Breakdow n — 0.1 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source — — 0.18 VGS = 10V, ID = 9.1A
On-State Resistance — — 0.21
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward T ransconductance 3.0 — — S ( )VDS ≥ 15V, IDS = 9.1A
Zero Gate Voltage Drain Current — — 25
— — 250 VDS = 0.8 x max. rating
Ω
VGS = 10V, ID = 14.4A
Ω
V
DS
µA
= 0.8 x max. rating,VGS = 0V
VGS = 0V, TJ = 25°C
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
nA
T otal Gate Charge 12.8 — 28.5 VGS = 10V, ID = 14.4A
Gate-to-Source Charge 1.0 — 6.3 VDS = Max. Rating x 0.5
nC
Gate-to-Drain (‘Miller’) Charge 3.8 — 16.6 see figures 6 and 13
T urn-On Dela y T ime — — 30 VDD = 50V , ID=14.4A, RG=7.5Ω
T urn-Off Delay Time — — 40
ns
Fall Time — — 45 see figure 10
Internal Drain Inductance — 8.7 —
Internal Source Inductance — 8.7 —
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
nH
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
Input Capacitance — 650 — VGS = 0v, VDS = 25V
Output Capacitance — 240 — pF f = 1.0MHz. (Figure 5)
Reverse T ransfer Capacitance — 44 —
Modified MOSFET
showing the internal
inductances.
symbol
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max
I
Continuous Source Current (Body Diode) — — 14.4
S
I
Pulse Source Current (Body Diode) — — 57.6
SM
V
Diode Forward V oltage — — 1.5 V Tj = 25°C, IS = 14.4A, VGS = 0V
SD
t
Rev erse Recov ery Time — — 300 ns Tj = 25°C, IF = 14.4A, di/dt ≤ 100 A/µs
rr
Q
Reverse Recovery Charge — — 3.0 µC VDD ≤ 50 V
RR
t
Forw ard Turn-On Time
on
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
Junction-to-Case — — 1.67
thJC
R
Junction-to-Ambient — — 80 K/W Typical socket mount
thJA
R
Case-to-Sink — 0.21 — Mounting surface flat, smooth
thCS
Units
Modified MOSFET
A
integr al reverse p-n junction rectifier.
Test Conditions
symbol showing the
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