International Rectifier IRFY044CM Datasheet
Provisional Data Sheet No. PD 9.1285C
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HEXFET® POWER MOSFET
60 V olt, 0.040Ω HEXFET
HEXFET technology is the key to International Rectifier’ s
advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited
for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between
the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
Product Summary
Features
n Hermetically sealed
n Electrically isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic eyelets
IRFY044CM
N-CHANNEL
Part Number BV
DSS
IRFY044CM 60V 0.040Ω 16A*
R
DS(on)
I
D
Absolute Maximum Ratings
ID @ VGS=10V, TC = 25°C Continuous Drain Current 16*
ID @ VGS=10V , TC = 100°C Continuous Drain Current 16* A
I
DM
PD @ TC = 25°C Max. Power Dissipation 100 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
T
J
T
stg
* ID current limited by pin diameter
Parameter IRFY044CM Units
Pulsed Drain Current 156
Linear Derating Factor 0.8 W/K
Gate-to-Source Voltage ±20 V
Single Pulse Avalance Energy 100 m J
Avalance Current 16* A
Repetitive Avalanche Energy 10 m J
Operating Junction -55 to 150
Storage Temperature Range °C
Lead Temperature 300 (0.063 in (1.6mm) from case for 10 sec)
Weight 4.3(typical) g
IRFY044CM Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
tr Rise Time — — 130 VGS = 10V
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown V oltage 60 — — V VGS = 0V, ID = 1.0mA
/∆TJT emperature Coefficient of Breakdow n — 0.68 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source — — 0.040 VGS = 10V, ID = 16A
µA
Ω
Ω
V
DS
= 0.8 x max. rating,VGS = 0V
On-State Resistance — — —
Gate Threshold V oltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward T ransconductance 17 — — S ( )VDS ≥ 15V, IDS = 16A
Zero Gate Voltage Drain Current — — 25
— — 250 VDS = 0.8 x max. rating
VGS = 0V, TJ = 125°C
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
nA
T otal Gate Charge 29 — 8 8 VGS = 10V, ID = 16A
Gate-to-Source Charge 6.7 — 15 VDS = Max. Rating x 0.5
nC
Gate-to-Drain (‘Miller’) Charge 18 — 5 2 see figures 6 and 13
T urn-On Dela y T ime — — 23 VDD = 30V, ID = 16A, RG = 9.1Ω
T urn-Off Delay Time — — 81
ns
Fall Time — — 79 see figure 10
Internal Drain Inductance — 8.7 —
Internal Source Inductance — 8.7 —
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
nH
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
Input Capacitance — 2400 — VGS = 0v, VDS = 25V
Output Capacitance — 1100 — pF f = 1.0MHz.
Reverse T ransfer Capacitance — 2 3 0 — see figure 5
Modified MOSFET
showing the internal
inductances.
symbol
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max
I
Continuous Source Current (Body Diode) — — 16
S
I
Pulse Source Current (Body Diode) — — 156
SM
V
Diode Forward V oltage — — 2.5 V Tj = 25°C, IS = 16A, VGS = 0V
SD
t
Rev erse Recov ery Time — — 220 ns Tj = 25°C, IF = 16A, di/dt ≤ 100 A/µs
rr
Q
Reverse Recovery Charge — — 1.6 µC VDD ≤ 50 V
RR
t
Forw ard Turn-On Time
on
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
Junction-to-Case — — 1.25
thJC
R
Junction-to-Ambient — — 80 K/W Typical socket mount
thJA
R
Case-to-Sink — 0.21 — Mounting surface flat, smooth
thCS
Units
Modified MOSFET
A
integr al reverse p-n junction rectifier.
Test Conditions
symbol showing the
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