International Rectifier IRFU9310, IRFR9310 Datasheet
PD 9.1663
PRELIMINARY
IRFR/U9310
HEXFET® Power MOSFET
l P-Channel
l Surface Mount (IRFR9310)
l Straight Lead (IRFU9310)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -1.8
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -1.1 A
I
DM
PD @TC = 25°C Power Dissipation 50 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -24 V/ns
T
J
T
STG
Pulsed Drain Current -7.2
Linear Derating Factor 0.40 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 92 mJ
Avalanche Current -1.8 A
Repetitive Avalanche Energy 5.0 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
D
S
D -P a k
TO-252AA
V
DSS
R
DS(on)
= -1.8A
I
D
I-Pak
TO-251AA
= -400V
= 7.0Ω
°C
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 2.5
Junction-to-Ambient (PCB mount)** ––– 5 0 °C/W
Junction-to-Ambient ––– 110
Parameter Typ. Max. Units
7/30/97
IRFR/U9310
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -400 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.41 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 7.0 Ω VGS = -10V, ID = -1.1A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 0.91 ––– ––– S VDS = -50V, ID = -1.1A
Drain-to-Source Leakage Current
––– ––– -100
––– ––– -500 VDS = -320V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -400V, VGS = 0V
µA
= 20V
GS
nA
VGS = -20V
Total Gate Charge ––– – – – 13 ID = -1.1A
Gate-to-Source Charge ––– – –– 3.2 nC VDS = -320V
Gate-to-Drain ("Miller") Charge ––– ––– 5.0 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = -200V
Rise Time ––– 10 ––– ID = -1.1A
Turn-Off Delay Time ––– 25 ––– RG = 21Ω
ns
Fall Time ––– 24 ––– RD = 180Ω, See Fig. 10
Internal Drain Inductance
Internal Source Inductance ––– –––
4.5
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 270 ––– VGS = 0V
Output Capacitance ––– 50 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 8.0 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-1.8
-7.2
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– -4.0 V TJ = 25°C, IS = -1.1A, VGS = 0V
Reverse Recovery Time – – – 170 26 0 ns TJ = 25°C, IF = -1.1A
Reverse RecoveryCharge ––– 640 960 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25°C, L = 57mH
J
= -1.8A. (See Figure 12)
AS
≤ -1.1A, di/dt ≤ 450A/µs, V
DD
≤ V
(BR)DSS
This is applied for I-PAK, L
lead and center of die contact
,
of D-PAK is measured between
S
D
G
S
IRFR/U9310
10
1
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-4.5V
D
-I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.1
1 10 100
-V , Drain-to-Source Voltage (V)
DS
10
J
10
1
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-4.5V
D
-I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
0.1
1 10 100
-V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
I =
D
-1.8A
°
T = 25 C
J
°
T = 150 C
J
1
D
-I , Drain-to-Source Current (A)
V = -50V
DS
0.1
4 5 6 7 8 9 10
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
-10V
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