International Rectifier IRFU9214, IRFR9214 Datasheet
PD - 9.1658A
PRELIMINARY
l P-Channel
l Surface Mount (IRFR9214)
l Straight Lead (IRFU9214)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
IRFR/U9214
HEXFET® Power MOSFET
D
S
D -P a k
TO-252AA
V
= -250V
DSS
R
DS(on)
ID = -2.7A
I-Pak
TO-251AA
= 3.0Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -2.7
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -1.7 A
I
DM
PD @TC = 25°C Power Dissipation 50 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -11
Linear Derating Factor 0.40 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 100 mJ
Avalanche Current -2.7 A
Repetitive Avalanche Energy 5.0 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 260 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 2.5
Junction-to-Ambient (PCB mount)** ––– 50 °C/W
Junction-to-Ambient ––– 110
°C
9/23/97
IRFR/U9214
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -250 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.25 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 3. 0 Ω VGS = -10V, ID = -1.7A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 0.9 ––– ––– S VDS = -50V, ID = -1.7A
Drain-to-Source Leakage Current
––– ––– -100
––– ––– -5 00 VDS = -200V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -250V, VGS = 0V
µA
= 20V
GS
nA
VGS = -20V
Total Gate Charge ––– ––– 14 ID = -1.7A
Gate-to-Source Charge ––– ––– 3.1 nC VDS = -200V
Gate-to-Drain ("Miller") Charge ––– ––– 6. 8 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = -125V
Rise Time ––– 14 ––– ID = -1.7A
Turn-Off Delay Time ––– 20 ––– RG =21 Ω
ns
Fall Time ––– 17 ––– RD =70 See Fig. 10
Internal Drain Inductance
Internal Source Inductance ––– –––
4.5
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 220 ––– VGS = 0V
Output Capacitance ––– 75 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 11 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-2.7
-11
showing the
A
p-n junction diode.
Diode Forward Voltage ––– –– – -5.8 V TJ = 25°C, IS = -2.7A, VGS = 0V
Reverse Recovery Time ––– 150 220 n s TJ = 25°C, IF = -1.7A
Reverse Recovery Charge ––– 870 1300 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25°C, L = 27 mH
J
= -2.7A. (See Figure 12)
AS
≤ -2.7A, di/dt ≤ 600A/µs, V
DD
≤ V
(BR)DSS
This is applied for I-PAK, L
lead and center of die contact
,
of D-PAK is measured between
S
D
G
S
IRFR/U9214
10
1
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-4.5V
D
-I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
10
10
1
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-4.5V
D
-I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
0.1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics
2.5
I =
D
-
-2.7A
°
T = 25 C
J
1
D
-I , Drain-to-Source Current (A)
V = -50V
0.1
4 5 6 7 8 9 10
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
T = 150 C
J
DS
°
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
-10V
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