International Rectifier IRFU9120N, IRFR9120N Datasheet
PD - 9.1507A
PRELIMINARY
l Ultra Low On-Resistance
l P-Channel
l Surface Mount (IRFR9120N)
l Straight Lead (IRFU9120N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
IRFR/U9120N
HEXFET® Power MOSFET
D
S
D - P ak
TO-252AA
V
DSS
R
DS(on)
ID = -6.6A
I-P a k
TO-251AA
= -100V
= 0.48Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -6.6
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -4.2 A
I
DM
PD @TC = 25°C Power Dissipation 40 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -26
Linear Derating Factor 0.32 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 100 mJ
Avalanche Current -6.6 A
Repetitive Avalanche Energy 4.0 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 3.1
Junction-to-Ambient (PCB mount)** ––– 50 °C/W
Junction-to-Ambient ––– 110
°C
3/16/98
IRFR/U9120N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.48 Ω VGS = -10V, ID = -3.9A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 1.4 ––– ––– S VDS = -50V, ID = -4.0A
Drain-to-Source Leakage Current
––– ––– - 25
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 27 ID = -4.0A
Gate-to-Source Charge ––– ––– 5.0 nC VDS = -80V
Gate-to-Drain ("Miller") Charge ––– ––– 15 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = -50V
Rise Time ––– 47 ––– ID = -4.0A
Turn-Off Delay Time ––– 28 ––– RG = 12 Ω
ns
Fall Time ––– 31 ––– RD =12 Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 350 ––– VGS = 0V
Output Capacitance – –– 110 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 70 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-6.6
-26
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -3.9A, VGS = 0V
Reverse Recovery Time ––– 100 150 ns TJ = 25°C, IF = -4.0A
Reverse Recovery Charge ––– 420 630 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25°C, L = 13mH
J
= -3.9A. (See Figure 12)
AS
≤ -4.0A, di/dt ≤ 300A/µs, V
DD
≤ V
(BR)DSS
This is applied for I-PAK, L
lead and center of die contact
Uses IRF9520N data and test conditions.
,
of D-PAK is measured between
S
D
G
S
IRFR/U9120N
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM
-4.5V
-4.5V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
100
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM
-4.5V
-4.5V
20µs PULSE WIDTH
T = 150 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output Characteristics
2.5
I =
D
-6.7A
°
T = 25 C
10
1
D
-I , Drain-to-Source Current (A)
0.1
4 5 6 7 8 9 10
-V , Gate-to-Source Voltage (V)
GS
J
T = 150 C
J
V = -50V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
°
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
V =
GS
°
-10V
Fig 4. Normalized On-Resistance
Vs. Temperature
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