International Rectifier IRFU5305, IRFR5305 Datasheet
l Ultra Low On-Resistance
l Surface Mount (IRFR5305)
l Straight Lead (IRFU5305)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET
the designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
®
Power MOSFETs are well known for, provides
PD - 91402A
IRFR/U5305
HEXFET® Power MOSFET
D
S
D-Pak I-Pak
IRFR5305 IRFU5305
V
DSS
R
DS(on)
ID = -31A
= -55V
= 0.065Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -3 1
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -2 2 A
I
DM
PD @TC = 25°C Power Dissipation 11 0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -110
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 280 mJ
Avalanche Current -16 A
Repetitive Avalanche Energy 11 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 1.4
Junction-to-Ambient (PCB mount)* ––– 50 °C/W
Junction-to-Ambient** ––– 110
°C
10/23/00
IRFR/U5305
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance –– – –– – 0.06 5 Ω VGS = -10V, ID = -16A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 8.0 ––– ––– S VDS = -25V, ID = -16A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage –– – ––– -100
VDS = -55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 63 ID = -16A
Gate-to-Source Charge ––– ––– 1 3 nC VDS = -44V
Gate-to-Drain ("Miller") Charge –– – ––– 29 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time –– – 1 4 –– – VDD = -28V
Rise Time –– – 66 ––– ID = -16A
Turn-Off Delay Time –– – 39 ––– RG = 6.8Ω
ns
Fall Time –– – 63 –– – RD = 1.6Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1200 ––– VGS = 0V
Output Capacitance ––– 520 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 250 –– – ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-31
-110
showing the
A
p-n junction diode.
G
Diode Forward Voltage –– – –– – -1.3 V TJ = 25°C, IS = -16A, VGS = 0V
Reverse Recovery Time –– – 71 11 0 ns TJ = 25°C, IF = -16A
Reverse RecoveryCharge ––– 170 250 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
V
= -25V, starting TJ = 25°C, L = 2.1mH
DD
RG = 25Ω, I
I
≤ -16A, di/dt ≤ -280A/µs, V
SD
= -16A. (See Figure 12)
AS
DD
≤ V
(BR)DSS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Uses IRF5305 data and test conditions.
,
TJ ≤ 175°C
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
** Uses typical socket mount.
2 www.irf.com
D
S
IRFR/U5305
A
A
)
A
)
A
1000
VGS
TO P - 15 V
- 10V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
BOT TO M - 4.5V
100
10
D
-I , Dra in-to-Sou rc e Curre n t (A )
-4.5 V
20µs PULSE WIDTH
T = 2 5°C
J
1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
c
Fig 1. Typical Output Characteristics
100
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
100
10
D
-I , Drain -to-S ou rce C urren t (A )
-4.5 V
20µs PULSE W IDTH
T = 175°C
J
1
0.1 1 10 100
-V , Dra in- to -S o u r ce Vo ltage (V
DS
C
Fig 2. Typical Output Characteristics
2.0
I = -27 A
D
T = 25°C
10
J
T = 175°C
J
1.5
1.0
(N orma l i z ed)
0.5
D
-I , D ra in-to -So u rce C u rren t (A)
1
45678910
-V , Gate -to-S ou rce V oltage (V
GS
V = -25 V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS (on)
R , D ra in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C )
J
Fig 4. Normalized On-Resistance
V = - 10 V
GS
Vs. Temperature
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