International Rectifier IRFU4105, IRFR4105 Datasheet
PD - 91302C
IRFR/U4105
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Surface Mount (IRFR4105)
l Straight Lead (IRFU4105)
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
G
D
V
= 55V
DSS
R
DS(on)
= 0.045Ω
ID = 27A
S
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
D - PAK
TO -252AA
I-P AK
TO-251AA
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 27
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 19 A
I
DM
PD @TC = 25°C Power Dissipation 68 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 100
Linear Derating Factor 0.45 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 65 mJ
Avalanche Current 16 A
Repetitive Avalanche Energy 6.8 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 2.2
Junction-to-Ambient (PCB mount) ** ––– 50 °C/W
Junction-to-Ambient ––– 110
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5/11/98
IRFR/U4105
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.045 VGS = 10V, ID = 16A
Gate Threshold Voltage 2.0 ––– 4. 0 V VDS = VGS, ID = 250µA
Forward Transconductance 6.5 ––– –– – S VDS = 25V, ID = 16A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
VDS = 55V, VGS = 0V
µA
VGS = 20V
nA
Total Gate Charge ––– –– – 34 ID = 16A
Gate-to-Source Charge ––– ––– 6.8 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– –– – 14 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.0 ––– VDD = 28V
Rise Time ––– 49 –––
Turn-Off Delay Time ––– 31 – –– RG = 18Ω
ns
ID = 16A
Fall Time ––– 40 ––– RD = 1.8Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
Input Capacitance ––– 70 0 – –– VGS = 0V
Output Capacitance ––– 240 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
27
100
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– –– – 1.6 V TJ = 25°C, IS = 16A, VGS = 0V
Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 16A
Reverse RecoveryCharge ––– 1 30 200 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 410µH
DD
RG = 25Ω, I
I
≤ 16A, di/dt ≤ 420A/µs, V
SD
TJ ≤ 175°C
= 16A. (See Figure 12)
AS
DD
≤ V
(BR)DSS
Pulse width ≤ 300µs; duty cycle ≤ 2%
Calculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A
This is applied for I-PAK, Ls of D-PAK is measured between lead and
,
center of die contact
Uses IRFZ34N data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2 www.irf.com
D
S
IRFR/U4105
)
A
)
A
A
A
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
100
BOTTOM 4.5V
10
4.5V
1
D
I , D ra in-to -S o u rc e Curre n t (A )
20µs PULSE WIDTH
T = 25°C
0.1
0.1 1 10 1 00
V , Dra in-t o-Sou rc e Voltage (V
DS
C
Fig 1. Typical Output Characteristics
100
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
100
BOTTOM 4.5V
10
1
D
I , Drain-to-Source Current (A)
4.5V
20µs PULSE WIDTH
T = 175°C
0.1
0.1 1 10 1 00
V , Dra in-t o-Sou rc e Voltage (V
DS
C
Fig 2. Typical Output Characteristics
2.4
I = 26 A
D
tion
T = 25°C
J
T = 175°C
J
10
D
I , D rain -to-S o urc e C urre nt (A )
1
45678910
V , Gate -to-S o urce V o ltage (V)
GS
V = 2 5V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.6
1.2
(Normalized)
0.8
0.4
DS (on)
R , D ra in-to - Source On R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
V = 1 0 V
GS
Vs. Temperature
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