International Rectifier IRFR4104, IRFU4104 Datasheet
PD - 94728
Pulsed Drain C
c
Single Pul
gy
d
Single Pul
h
Aval
c
R
g
J
(PCB
i
AUTOMOTIVE MOSFET
IRFR4104
IRFU4104
HEXFET® Power MOSFET
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
Absolute Maximum Ratings
Parameter Units
(Silicon Limited)
ID @ TC = 25°C
ID @ TC = 100°C
@ TC = 25°C
I
D
I
DM
PD @TC = 25°C
V
GS
E
AS (Thermally limited)
(Tested )
E
AS
I
AR
E
AR
T
J
T
STG
Contin uous Drain Current , V
Contin uous Drain Current , V
Contin uous Drain Current , V
urrent
Power Dissipati on W
Linear D er a t i ng Factor W/°C
Gate-to-Sour c e V o l tage V
se Avalanche Ener
se Avalanche Energy Tested Value
anche Current
epetitive Avalanche Energy
Operat i n g J unction and
Storag e Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque , 6- 32 or M3 screw
@ 10V
GS
@ 10V
GS
@ 10V
GS
(Package Limited)
Thermal Resistance
Parameter Typ. Max. Units
R
JC
θ
R
JA
θ
R
JA
θ
Junction-to-Case ––– 1.05
unction-to-Ambient
Junction-to-Ambient ––– 110
mount)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com 1
D
V
= 40V
DSS
R
S
®
D-Pak
IRFR4104
DS(on)
ID = 42A
= 5.5mΩ
I-Pak
IRFU4104
Max.
119
84
42
480
140
0.95
± 20
145
310
See Fig.12a, 12b, 15 , 16
-55 to + 175
300 (1. 6m m fr o m case )
y
in (1.1Nym)
10 lbf
––– 40 °C/W
mJ
mJ
A
A
7/17/03
IRFR/U4104
/
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
∆
V
(BR)DSS
R
DS(on)
V
GS(th)
gfs Forwa rd Transconductance 58 ––– ––– S
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff.
oss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Sou rce Breakdown Vol tage 40 ––– ––– V
∆
T
Breakdown Voltag e Temp. Coef ficient ––– 0.032 ––– V/°C
J
Ω
Stat ic D r ai n- to-Sou rc e O n- R e s i s tance ––– 4.3 5.5
m
Gate Threshold Voltage 2.0 ––– 4.0 V
Drain-to-Sou rce Leaka ge Cu rr ent ––– ––– 20 µA
––– ––– 250
Gate-to-Sour c e Fo r w ard Leakage ––– ––– 200 nA
Gate-to-Sour c e R ev erse Leak age ––– ––– -200
Total Gate Charge ––– 59 89
Gate-to-Sour c e C harge ––– 19 – –– nC
Gate-to-Drai n ("Miller" ) Charge ––– 24 –––
Turn-On Delay Time ––– 17 –––
Rise Time ––– 69 –––
Turn-Off Delay Time ––– 37 ––– ns
Fall Time ––– 36 –––
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
Internal Source Inductance ––– 7.5 ––– from package
Input Capacitance ––– 2950 –––
Output Capacitance ––– 660 –––
Reverse Transf er C ap ac itance ––– 370 ––– pF
Output Capacitance ––– 2130 –––
Output Capacitance ––– 590 –––
Effe c tive Out pu t Capacita nce ––– 850 –––
Paramete r Min . Typ. Max. Un its
Contin uous Source Cu rrent ––– ––– 42
(Body Diode) A
Pulsed Source Current ––– ––– 480
(Body Diode)
Diode Forward Voltage ––– ––– 1.3 V
Reverse Recovery Time ––– 28 42 ns
Reverse Recovery Charge ––– 24 36 nC
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
c
Conditions
VGS = 0V, ID = 250µA
Referen ce to 25°C, I
= 10V, ID = 42A
V
GS
= 1mA
D
e
VDS = VGS, ID = 250µA
= 10V, ID = 42A
V
DS
= 40V, VGS = 0V
V
DS
= 40V, VGS = 0V, TJ = 125°C
V
DS
= 20V
V
GS
= -20V
V
GS
I
= 42A
D
= 32V
V
DS
VGS = 10V
e
VDD = 20V
= 42A
I
D
Ω
= 6.8
R
G
VGS = 10V
e
and center of die contact
VGS = 0V
= 25V
V
DS
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
= 0V, VDS = 32V, ƒ = 1. 0M Hz
V
GS
= 0V, VDS = 0V to 32V
V
GS
f
Conditions
MOSFET symbol
showing the
integral reverse
p-n junct ion diode.
T
= 25°C, IS = 42A, VGS = 0V
J
TJ = 25°C, IF = 42A, VDD = 20V
di/dt = 100A/µs
e
e
2 www.irf.com
IRFR/U4104
1000
)
A
(
t
n
e
r
r
100
u
C
e
c
r
u
o
S
-
o
t
-
10
n
i
a
r
D
,
D
I
4.5V
60µs PULSE WIDTH
Tj = 25°C
1
0.1 1 10 100
0 1 10 100
VDS, Drain-to-Sour ce Voltage (V)
1000
)
Α
(
t
n
e
r
r
100
u
C
e
c
r
u
o
S
-
o
t
-
10
n
i
a
r
D
,
D
I
TJ = 25°C
V
= 20V
DS
60µs PULSE WIDTH
1
4 6 8 10
VGS, Gate-to-Source Voltage (V)
V
TOP 15V
10V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
GS
8.0V
TJ = 175°C
1000
)
A
(
t
n
e
r
r
100
u
C
e
c
r
u
o
S
-
o
t
-
10
n
i
a
r
D
,
D
I
4.5V
60µs PULSE WIDTH
Tj = 175°C
1
0.1 1 10 100
0 1 10 100
VDS, Drain-to-Sour ce Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
120
)
S
(
100
e
c
n
a
t
c
80
u
d
n
o
c
s
60
n
a
r
T
d
r
a
40
w
r
o
F
,
s
20
f
G
0
0 20406080100
ID, Drain-to-Source Current (A)
TJ = 175°C
TJ = 25°C
V
= 10V
DS
380µs PULSE WIDTH
V
TOP 15V
10V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
GS
8.0V
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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IRFR/U4104
5000
4000
)
F
p
(
e
3000
c
n
a
t
i
c
a
p
2000
a
C
,
C
1000
0
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
Ciss
Coss
Crss
+ Cgd, C
gs
gd
+ C
ds
iss
C
rss
C
oss
VDS, Drain-to-Sour ce Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000.0
)
A
(
t
100.0
n
e
r
r
u
C
n
i
a
r
10.0
D
e
s
r
e
v
e
R
,
1.0
D
S
I
0.1
TJ = 175°C
TJ = 25°C
0.0 0.5 1.0 1.5 2.0
VSD, Source-toDrain V oltage (V)
20
SHORTED
ds
gd
)
V
(
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
e
t
a
G
,
V
ID= 42A
16
12
8
S
4
G
0
0 20406080100
Q
VDS= 32V
VDS= 20V
Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
)
A
1000
(
t
n
e
r
r
u
C
100
e
c
r
u
o
S
-
10
o
t
-
n
i
a
r
D
,
1
D
I
V
= 0V
GS
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0 1 10 100 1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
V
, Drain-toSource V oltage (V)
DS
100µsec
1msec
10msec
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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