International Rectifier IRFU3711 Datasheet
PD- 94061
SMPS MOSFET
IRFR3711
IRFU3711
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
V
DSS
20V 6.5mΩ 110A
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V V
l Fully Characterized Avalanche Voltage
GS
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 69 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TC = 25°C Maximum Power Dissipation 120 W
Linear Derating Factor 0.96 mW/°C
TJ , T
STG
Drain-Source Voltage 20 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 440
Junction and Storage Temperature Range -55 to + 150 °C
HEXFET® Power MOSFET
R
DS(on)
D-Pak I-Pak
IRFR3711 IRFU3711
max I
D
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 1.04
Junction-to-Ambient (PCB mount) ––– 50 °C/W
Junction-to-Ambient ––– 110
Notes through are on page 10
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2/7/01
IRFR/U3711
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 –– – ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 5.2 6.5 VGS = 10V, ID = 15A
––– 6.7 8.5 VGS = 4.5V, ID = 12A
mΩ
Gate Threshold Voltage 1 .0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 16V, VGS = 0V
µA
nA
VGS = -16V
Forward Transconductance 53 ––– ––– S VDS = 16V, ID = 30A
Total Gate Charge ––– 29 44 ID = 15A
Gate-to-Source Charge ––– 7.3 ––– nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 8.9 –– – VGS = 4.5V
Output Gate Charge ––– 33 ––– VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 12 ––– VDD = 10V
Rise Time ––– 220 ––– ID = 30A
Turn-Off Delay Time ––– 17 – –– RG = 1.8Ω
ns
Fall Time ––– 12 ––– VGS = 4.5V
Input Capacitance ––– 2980 ––– VGS = 0V
Output Capacitance ––– 1770 ––– pF VDS = 10V
Reverse Transfer Capacitance ––– 280 ––– ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 460 mJ
Avalanche Current ––– 30 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
110
440
showing the
A
p-n junction diode.
G
––– 0.88 1.3 V TJ = 25°C, IS = 30A, VGS = 0V
––– 0.82 ––– TJ = 125°C, IS = 30A, VGS = 0V
Reverse Recovery Time ––– 50 75 ns TJ = 25°C, IF = 16A, VR=10V
Reverse Recovery Charge ––– 61 92 nC di/dt = 100A/µs
Reverse Recovery Time ––– 48 72 ns TJ = 125°C, IF = 16A, VR=10V
Reverse Recovery Charge ––– 65 98 nC di/dt = 100A/µs
2 www.irf.com
D
S
IRFR/U3711
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
1000
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 150 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
110A
I =
D
°
T = 25 C
J
1.5
°
T = 150 C
J
100
D
I , Drain-to-Source Current (A)
V = 25V
DS
10
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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