International Rectifier IRFU3708, IRFR3708 Datasheet
SMPS MOSFET
PD - 93935B
IRFR3708
IRFU3708
Applications
l High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
l High Frequency Buck Converters for
V
DSS
30V 12.5mΩ 61A
HEXFET® Power MOSFET
R
DS(on)
max I
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
and Current
DS(on)
at 4.5V V
GS
D-Pak I-Pak
IRFR3708 IRFU3708
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 61
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 51 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 87 W
PD @TA = 70°C Maximum Power Dissipation 61 W
Linear Derating Factor 0.58 W/°C
TJ , T
STG
Drain-Source Voltage 30 V
Gate-to-Source Voltage ± 12 V
Pulsed Drain Current 244
Junction and Storage Temperature Range -55 to + 175 °C
D
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Junction-to-Case ––– 1.73
Junction-to-Ambient (PCB mount)* ––– 50 °C/W
Junction-to-Ambient ––– 110
Notes through are on page 9
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8/22/00
IRFR/U3708
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max.Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
––– 8.5 12.5 V
= 10V, ID = 15A
GS
––– 10.0 14.0 mΩ VGS = 4.5V, ID = 12A
––– 15.0 30.0 VGS = 2.8V, ID = 7.5A
Gate Threshold Voltage 0.6 ––– 2.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 24V, VGS = 0V
µA
nA
VGS = -12V
Forward Transconductance 49 ––– ––– SVDS = 15V, ID = 50A
Total Gate Charge ––– 24 ––– ID = 24.8A
Gate-to-Source Charge ––– 6.7 ––– nC VDS = 15V
Gate-to-Drain ("Miller") Charge ––– 5.8 ––– VGS = 4.5V
Output Gate Charge ––– 14 21 VGS = 0V, ID = 24.8A, VDS = 15V
Turn-On Delay Time ––– 7.2 ––– VDD = 15V
Rise Time ––– 50 ––– ID = 24.8A
Turn-Off Delay Time ––– 17.6 ––– RG = 0.6Ω
ns
Fall Time ––– 3.7 ––– VGS = 4.5V
Input Capacitance ––– 2417 ––– VGS = 0V
Output Capacitance ––– 707 ––– VDS = 15V
Reverse Transfer Capacitance ––– 52 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 213 mJ
Avalanche Current ––– 62 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
61
244
showing the
A
p-n junction diode.
G
––– 0.88 1.3 V TJ = 25°C, IS = 31A, VGS = 0V
––– 0.80 ––– TJ = 125°C, IS = 31A, VGS = 0V
Reverse Recovery Time ––– 41 62 ns TJ = 25°C, IF = 31A, VR=20V
Reverse Recovery Charge ––– 64 96 nC di/dt = 100A/µs
Reverse Recovery Time ––– 43 65 ns TJ = 125°C, IF = 31A, VR=20V
Reverse Recovery Charge ––– 70 105 nC di/dt = 100A/µs
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D
S
IRFR/U3708
1000
100
2.7V
10
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 25°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
TOP 10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
VGS
1000
100
2.7V
10
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 175°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.5
61A
I =
D
TOP 10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
VGS
2.0
°
T = 25 C
J
100
D
I , Drain-to-Source Current (A)
10
2.0 3.0 4.0 5.0 6.0
V , Gate-to-Source Voltage (V)
GS
°
T = 175 C
J
V = 15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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