International Rectifier IRFU3303, IRFR3303 Datasheet
l Ultra Low On-Resistance
l Surface Mount (IRFR3303)
l Straight Lead (IRFU3033)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
PD - 9.1642A
IRFR/U3303
HEXFET® Power MOSFET
D
S
D -P a k
TO-252AA
V
DSS
R
DS(on)
ID = 33A
I-Pak
TO-251AA
= 30V
= 0.031Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33
@ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A
I
D
I
DM
PD @TC = 25°C Power Dissipation 57 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 120
Linear Derating Factor 0.45 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 95 mJ
Avalanche Current 18 A
Repetitive Avalanche Energy 5.7 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 2.2
Junction-to-Ambient (PCB mount)** ––– 5 0 °C/W
Junction-to-Ambient ––– 110
8/25/97
IRFR/U3303
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 –– – ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.031 Ω VGS = 10V, ID = 18A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 9.3 ––– ––– S VDS = 25V, ID = 18A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– – –– -100
VDS = 30V, VGS = 0V
µA
= 20V
GS
nA
VGS = -20V
Total Gate Charge ––– – – – 29 ID = 18A
Gate-to-Source Charge ––– –– – 7.3 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– –– – 1 3 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = 15V
Rise Time ––– 99 ––– ID = 18A
Turn-Off Delay Time ––– 16 ––– RG = 13Ω
ns
Fall Time ––– 28 ––– RD = 0.8Ω, See Fig. 10
Internal Drain Inductance
Internal Source Inductance ––– –––
4.5
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 750 ––– VGS = 0V
Output Capacitance ––– 400 ––– p F VDS = 25V
Reverse Transfer Capacitance ––– 1 4 0 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
33
120
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V
Reverse Recovery Time – – – 53 80 ns TJ = 25°C, IF = 18A
Reverse RecoveryCharge ––– 94 140 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25°C, L = 590µH
J
= 18A. (See Figure 12)
AS
≤ 18A, di/dt ≤ 140A/µs, V
DD
≤ V
(BR)DSS
Caculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A.
,
This is applied for I-PAK, L
lead and center of die contact
of D-PAK is measured between
S
D
G
S
IRFR/U3303
1000
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
100
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
4.5V
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output Characteristics
2.0
I =
D
30A
°
T = 150 C
J
10
°
T = 25 C
1
D
I , Drain-to-Source Current (A)
0.1
4 5 6 7 8 9 10
J
V = 25V
15V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
10V
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