International Rectifier IRFU2605, IRFR2605 Datasheet
PD - 9.1253
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IRFR2605
IRFU2605
HEXFET® Power MOSFET
Ultra Low On-Resistance
ESD Protected
Surface Mount (IRFR2605)
Straight Lead (IRFU2605)
G
150°C Operating Temperature
Repetitive Avalanche Rated
Fast Switching
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques that achieve extremely low on-resistance per silicon area
and allow electrostatic discharge protection to be integrated in the gate structure.
These benefits, combined with the ruggedized device design that HEXFETs are
known for, provide the designer with extremely efficient and reliable device for use
in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 watts are possible in
typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 19
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A
I
DM
PD @TC = 25°C Power Dissipation 50
PD @TC = 25°C Power Dissipation (PCB Mount)** 3.1
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
T
J, TSTG
V
ESD
Pulsed Drain Current 76
Linear Derating Factor 0.40
Linear Derating Factor (PCB Mount)** 0.025
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 100 mJ
Avalanche Current 12 A
Repetitive Avalanche Energy 5.0 mJ
Junction and Storage Temperature Range -55 to + 150
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Human Body Model, 100pF, 1.5K Ω 2000 V
D
V
= 55V
DSS
R
DS(on)
= 0.075Ω
ID = 19A
S
D-PAK
TO-252AA
I-PAK
TO-251AA
W/°C
°C
W
Thermal Resistance
R
θJC
R
θJA
R
θJA
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameter Min. Typ. Max. Units
Junction-to-Case — — 2.5
Junction-to-Ambient (PCB Mount)** — — 40 °C/W
Junction-to-Ambient — — 62
S
S
IRFR2605
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IRFU2605
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.051 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.085 Ω VGS = 10V, ID = 11A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 3.6 ––– ––– S VDS = 25V, ID = 11A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 10 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -10 VGS = -20V
––– ––– 25 VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 125°C
µA
µA
Total Gate Charge ––– ––– 23 ID = 11A
Gate-to-Source Charge ––– ––– 5.4 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 10 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.1 ––– VDD = 25V
Rise Time ––– 56 ––– ID = 11A
Turn-Off Delay Time ––– 31 ––– RG = 20Ω
ns
Fall Time ––– 39 ––– RD = 2.2Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 420 ––– VGS = 0V
Output Capacitance ––– 250 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 67 ––– ƒ = 1.0MHz, See Fig. 5
D
G
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 830µH
DD
RG = 25Ω, I
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 18
––– ––– 72
A
G
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 11A, VGS = 0V
Reverse Recovery Time ––– 67 100 ns TJ = 25°C, IF = 11A
Reverse RecoveryCharge ––– 0.18 0.26 µC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 11A, di/dt ≤ 110A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 11A. (See Figure 12)
AS
D
A
A
A
A
IRFR2605
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IRFU2605
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 25°C
0.1
0.01 0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 1. Typical Output Characteristics,
TC = 25oC
100
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
0.1
0.01 0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 2. Typical Output Characteristics,
TC = 150oC
2.0
I = 19A
D
10
D
I , Drain-to-Source Current (A)
1
4 5 6 7 8 9 10
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
T = 25 °C
J
T = 150°C
J
V = 25V
DS
20µs PULS E WIDTH
V , Gate-to-Source Voltage (V)
GS
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
Vs. Temperature
V = 10V
GS
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