International Rectifier IRFU2405, IRFR2405 Datasheet
PD - 93861
IRFR2405
IRFU2405
l Surface Mount (IRFR2405)
l Straight Lead (IRFU2405)
l Advanced Process Technology
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
Description
Seventh Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
G
HEXFET® Power MOSFET
D
V
= 55V
DSS
R
DS(on)
= 0.016Ω
ID = 56A
S
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
D-Pak I-Pak
IRFR2405 IRFU2405
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 56
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 A
I
DM
PD @TC = 25°C Power Dissipation 110 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 220
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 130 mJ
Avalanche Current 34 A
Repetitive Avalanche Energy 11 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Junction-to-Case ––– 1.4
Junction-to-Ambient (PCB mount)* ––– 50 °C/W
Junction-to-Ambient ––– 110
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3/1/00
IRFR/U2405
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 350 ––– VGS = 0V, VDS = 0V to 44V
oss
Drain-to-Source Breakdown Voltage 55 –– – ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 0.0118 0.016 Ω VGS = 10V, ID = 34A
Gate Threshold Voltage 2.0 –– – 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 30 ––– ––– S VDS = 25V, ID = 34A
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– – –– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– 70 11 0 ID = 34A
Gate-to-Source Charge ––– 16 23 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– 19 29 VGS = 10V
Turn-On Delay Time ––– 15 ––– VDD = 28V
Rise Time ––– 130 ––– ID = 34A
Turn-Off Delay Time ––– 55 ––– RG = 6.8Ω
ns
Fall Time ––– 78 ––– VGS = 10V
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
4.5
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance – –– 2430 ––– VGS = 0V
Output Capacitance ––– 4 70 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 1 00 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 2040 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 3 50 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
56
220
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 34A, VGS = 0V
Reverse Recovery Time ––– 62 93 ns TJ = 25°C, IF = 34A
Reverse RecoveryCharge ––– 170 260 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.22mH
RG = 25Ω, I
I
≤ 34A, di/dt ≤ 190A/µs, V
SD
TJ ≤ 175°C
AS
= 34A.
DD
≤ V
(BR)DSS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
oss
while V
is rising from 0 to 80% V
DS
DSS
Calculated continuous current based on maximum allowable
,
junction temperature. Package limitation current is 30A
2 www.irf.com
D
S
IRFR/U2405
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
I =
D
56A
2.0
°
T = 25 C
J
°
T = 175 C
100
D
I , Drain-to-Source Current (A)
10
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
J
V = 25V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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