International Rectifier IRFU220N, IRFR220N Datasheet
SMPS MOSFET
PD- 94048
IRFR220N
IRFU220N
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
V
DSS
R
DS(on)
max (mΩ) I
200V 600 5.0A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
to Simplify Design, (See
OSS
D-Pak
IRFR22ON
I-Pak
IRFU220N
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 5.0
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 3.5 A
I
DM
PD @TC = 25°C Power Dissipation 43 W
V
GS
dv/dt Peak Diode Recovery dv/dt 7.5 V/ns
T
J
T
STG
Pulsed Drain Current 20
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 20 V
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
D
Typical SMPS Topologies
l Telecom 48V input Forward Converters
Notes through are on page 10
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11/29/00
IRFR/U220N
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 46 ––– VGS = 0V, VDS = 0V to 160V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θJA
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
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Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.23 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 600 mΩ VGS = 10V, ID = 2.9A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 200V, VGS = 0V
µA
nA
VGS = -20V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 2.6 ––– ––– S VDS = 50V, ID = 2.9A
Total Gate Charge ––– 15 23 ID = 2.9A
Gate-to-Source Charge ––– 2.4 3.6 nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– 6.1 9. 2 VGS = 10V,
Turn-On Delay Time ––– 6.4 ––– VDD = 100V
Rise Time ––– 11 ––– ID = 2.9A
Turn-Off Delay Time ––– 20 – –– RG = 24Ω
ns
Fall Time ––– 12 ––– VGS = 10V
Input Capacitance ––– 300 ––– VGS = 0V
Output Capacitance ––– 53 ––– VDS = 25V
Reverse Transfer Capacitance ––– 15 –– – pF ƒ = 1.0MHz
Output Capacitance ––– 300 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 23 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 46 mJ
Avalanche Current ––– 2.9 A
Repetitive Avalanche Energy ––– 4.3 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 3.5
Junction-to-Ambient (PCB mount)* ––– 50 °C/W
Junction-to-Ambient ––– 110
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 2.9A, VGS = 0V
Reverse Recovery Time ––– 90 140 ns TJ = 25°C, IF = 2.9A
Reverse RecoveryCharge ––– 320 480 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
5.0
20
showing the
A
p-n junction diode.
G
D
S
IRFR/U220N
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
4.5V
J
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.5
4.8A
I =
D
°
T = 25 C
J
10
1
D
I , Drain-to-Source Current (A)
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
T = 175 C
J
V = 50V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
3.0
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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