International Rectifier IRFU024N, IRFR024N Datasheet
PD- 9.1336A
PRELIMINARY
IRFR/U024N
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Surface Mount (IRFR024N)
l Straight Lead (IRFU024N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A
I
DM
PD @TC = 25°C Power Dissipation 45 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 68
Linear Derating Factor 0.30 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 71 mJ
Avalanche Current 10 A
Repetitive Avalanche Energy 4.5 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
D
V
= 55V
DSS
R
DS(on)
= 0.075Ω
ID = 17A
S
D - P ak
TO-252AA
I-P a k
TO-251AA
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Junction-to-Case ––– 3.3
Case-to-Ambient (PCB mount)** ––– 50 °C/W
Junction-to-Ambient ––– 110
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IRFR/U024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.075 Ω VGS = 10V, ID = 10A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 4.5 ––– ––– S VDS = 25V, ID = 10A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 20 ID = 10A
Gate-to-Source Charge ––– ––– 5.3 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 7.6 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 4.9 ––– VDD = 28V
Rise Time ––– 34 ––– ID = 10A
Turn-Off Delay Time ––– 19 ––– RG = 24Ω
ns
Fall Time ––– 27 ––– RD = 2.6Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 370 ––– VGS = 0V
Output Capacitance ––– 140 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 65 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
17
68
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 10A, VGS = 0V
Reverse Recovery Time ––– 56 83 ns TJ = 25°C, IF = 10A
Reverse RecoveryCharge ––– 120 180 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 1.0mH
DD
RG = 25Ω, I
I
≤ 10A, di/dt ≤ 280A/µs, V
SD
= 10A. (See Figure 12)
AS
DD
≤ V
(BR)DSS
This is applied for I-PAK, L
lead and center of die contact.
,
Uses IRFZ24N data and test conditions.
of D-PAK is measured between
S
TJ ≤ 175°C
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D
S
IRFR/U024N
A
A
)
A
A
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOT TOM 4. 5V
10
D
I , D ra in-to -S o u rc e C u rre n t (A )
4.5V
20µs PULS E WIDTH
T = 25°C
1
0.1 1 10 100
V , Dra in-t o -S o u rc e V o ltage (V)
DS
100
C
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
D
I , D ra in-to -S o u rc e C u rre n t (A )
20µs PULS E WIDTH
T = 175°C
1
0.1 1 10 100
V , Dra in-t o -S o u rc e V o ltage (V)
DS
C
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I = 1 7A
D
2.5
T = 25°C
J
T = 175°C
J
10
D
I , Drain-to-Source Current (A)
1
45678910
V , Ga te - to -S ou rc e V o ltage (V
GS
V = 25V
DS
20µs PULSE W IDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(N o rma lize d )
1.0
0.5
DS(on)
R , D ra in -to -S o u rc e On R e s is tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Tem pe rature (°C)
J
Fig 4. Normalized On-Resistance
V = 10 V
GS
Vs. Temperature
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